Presentation Information
[18a-A23-6]Influence of Channel Resistance on Split C-V Characteristics in MOSFETs and the Correction Based on a Transmission Model for Accurate Evaluation of Effective Mobility
〇(M2)Zhao Jin1, Yutong Chen1, Xueyang Han1, Hiroshi Oka2, Takahiro Mori2, Kasidit Toprasertpong1, Mitsuru Takenaka1, Shinichi Takagi1 (1.U. Tokyo, Eng., 2.AIST)
Keywords:
MOSFET,Split C-V,Transmission Line Model
Split C-V is a classic technique for evaluating the electrical properties of MOSFET devices. However, high MOS channel resistance due to low NS, long channel length, and low mobility can degrade the accuracy of Cgc measurements and the subsequent evaluation of NS and effective mobility.
We propose to use a transmission line model to express the relationship between ideal and measured Cgc values and represent the correct Cgc values by using both capacitance and conductance experimental data. The effectiveness of this correction method is verified by long-channel Si MOSFETs at room and cryogenic temperatures. Accuracy in effective mobility evaluation can be significantly improved for MOSFETs with high channel resistance by using this method.
We propose to use a transmission line model to express the relationship between ideal and measured Cgc values and represent the correct Cgc values by using both capacitance and conductance experimental data. The effectiveness of this correction method is verified by long-channel Si MOSFETs at room and cryogenic temperatures. Accuracy in effective mobility evaluation can be significantly improved for MOSFETs with high channel resistance by using this method.
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