[18a-A23-1~13] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[18a-A23-8] First-principal calculations on valley splitting in Si quantum wells stressed in the [110] direction

〇Toshiaki Hayashi¹, Hiroyuki Kageshima², Jinichiro Noborisaka¹, Katsuhiko Nishiguchi¹ (1.NTT BRL, 2.Shimane Univ.)

Keywords:

giant valley splitting,strained Si quantum well,first principle calculation

In Si confinement structures, valley splitting has recently regained attention in research related to quantum computers. We have been conducting experiments and first-principles calculations to elucidate the causes of large valley separation and to control its magnitude. In this presentation, we discuss the stress intensity dependence of valley splitting in Si quantum wells strained along the [110] direction.