Presentation Information
[18a-A32-3]Evaluation of charge noise correlation based on simultaneous current measurements of parallel quantum dot channels
〇Tatsuya Matsuda1, Ryutaro Matsuoka1, Kazuto Takahashi1, Ryuta Tsuchiya2, Toshiyuki Mine2, Digh Hisamoto2, Hiroyuki Mizuno2, Raisei Mizokuchi1, Tetsuo Kodera1, Jun Yoneda1 (1.Tokyo Tech., 2.R&D Group, Hitachi Ltd.)
Keywords:
Si quantum dot,charge noise,cross-correlation
Silicon spin qubits are susceptible to similar noise due to their small occupied area, and understanding noise correlations is essential. Although previous studies have shown high noise correlation in silicon spin qubits, the measurement is inefficient and disadvantageous from the viewpoint of integration. In this study, we focus on the dominant charge noise and analyze the current measurements of two quantum dots between adjacent channels to evaluate the noise correlation more efficiently.
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