[18a-A35-1~7] CS.6 Code-sharing Session of 4.5 & 17

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)English Presentation

[18a-A35-4] Fabrication and Characterization of Germanium Monosulfide Field-Effect Transistors

〇Qinqiang Zhang¹, Ryo Matsumura¹, Kazuhito Tsukagoshi¹, Naoki Fukata¹ (1.MANA-NIMS)

Keywords:

GeS

The discovery of graphene stimulates the development of low dimensional materials based functional devices. However, the gapless behaviors of graphene restrain itself for next-generation semiconducting electronics and optoelectronics. The germanium monosulfide (GeS), as one of the newly re-discovered and promising two-dimensional layered semiconductors, has recently emerged. Previously, we have achieved the synthesis of large area germanium monosulfide (GeS). In this abstract, we focus on the fabrication of the GeS field-effect transistors and its current-voltage characterizations.