[18a-B2-1~8] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[18a-B2-2] Growth of InAsSb for Thermoradiative Diode Application

〇(M1)Junpei Ota¹, Yamato Kyuno¹, Tetsuya Nakamura², Keisuke Yamane¹ (1.Toyohashi Tech, 2.JAXA)

Keywords:

Dilute Nitride,Thermoradiative Diode