The 85th JSAP Autumn Meeting 2024
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Session Details

Oral presentation15 Crystal Engineering : 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[18a-B2-1~8]15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Wed. Sep 18, 2024 9:15 AM - 11:30 AM JST
Wed. Sep 18, 2024 12:15 AM - 2:30 AM UTC
B2 (Exhibition Hall B)
Nobuhiko Ozaki(Wakayama Univ.), Katsuhiro Tomioka(Hokkaido Univ.)
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9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18a-B2-1]Anisotropic growth of InAs nanowires by MBE

〇(D)Soh Komatsu1, Masashi Akabori1 (1.CNMT, JAIST)
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9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[18a-B2-2]Growth of InAsSb for Thermoradiative Diode Application

〇(M1)Junpei Ota1, Yamato Kyuno1, Tetsuya Nakamura2, Keisuke Yamane1 (1.Toyohashi Tech, 2.JAXA)
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9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[18a-B2-3]Crystal growth for fabrication of InP/InGaAs lateral HBT in SiO2 cavity

〇Kazuki Kobayashi1, Shota Watanabe1, Yasuyuki Miyamoto1 (1.Tokyo Tech Univ.)
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10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[18a-B2-4]Preparation of quantum discs by stacked submonolayer growth with modulated baselayer

〇Haruto Okuizumi1, Ronel Roca1, Itaru Kamiya1 (1.Toyota Tech. Inst.)
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10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[18a-B2-5]In-situ observation of strain in multi-layer InAs/GaAs quantum dots using MIC method

〇Masahiro Kakuda1, Jinkwan Kwoen1, Yasuhiko Arakawa1 (1.Univ. of Tokyo)
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10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[18a-B2-6]Low-Indium InAlGaAs Capped InAs Quantum Dots on InP for Tunable Emission Wavelength

〇JINKWAN KWOEN1, Masahiro Kakuda1, Yasuhiko Arakawa1 (1.U. Tokyo, NanoQuine)
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11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[18a-B2-7]Generation of terahertz electromagnetic wave with difference frequency mixing by using lattice mismatched strain due to growth of InAs quantum dot

〇Takato Suzuki1, Osamu Kojima1, Toshiyuki Kaizu2,3, Osamu Wada3, Takashi Kita3 (1.Chiba Inst. Tech., 2.Kyoto Univ., 3.Kobe Univ.)
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11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[18a-B2-8]Circularly polarized photoluminescence properties of InGaAs quantum dot-dilute nitride GaNAs tunnel-coupled structures sandwiched between AlGaAs barriers

〇Shusuke Nomura1, Satoshi Hiura1, Junichi Takayama1, Murayama Akihiro1 (1.IST, Hokkaido Univ.)
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