[18a-C32-1~9] 12.1 Fabrications and Structure Controls

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[18a-C32-7] Fabrication and structural analyses of Ph-BTBT-C_n thin filmsgrowth on Hf_0.5Zr_0.5O₂ gate insulators

Daiji Kitamura^1,2, Towa Nakazawa¹, Hiroshi Takase¹, Ryoga Takemoto¹, Yuta Sakai¹, Yuta Kawano^1,2, Kazuto Koike^1,2, 〇Nobuya Hiroshiba^1,2 (1.OIT, 2.OIT. NMRC)

Keywords:

Ferroelectric gate dielectric,Ph-BTBT-Cn

The morphology and crystal structure of Ph-BTBT-Cn thin films deposited on HZO gate dielectrics with orthorhombic crystal structure by spin-coating were investigated in detail. The Ph-BTBT-Cn films are expected to be used in device applications, since its high field-effect mobility exceeds that of amorphous silicon. In this presentation, we will discuss the effect of annealing treatment on the surface morphology and crystal structure of Ph-BTBT-Cn thin films on HZO gate insulators.