[18a-C42-1~13] 15.4 III-V-group nitride crystals

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18a-C42-1] RF-MBE growth and evaluation of thermoelectric properties of whole-content InGaN

〇Shota Hattori¹, Tsutomu Araki¹, Momoko Deura² (1.Ritsumeikan Univ., 2.R-GIRO)

Keywords:

InGaN,thermoelectric properties,RF-MBE