The 85th JSAP Autumn Meeting 2024
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Session Details

Oral presentation15 Crystal Engineering : 15.4 III-V-group nitride crystals

[18a-C42-1~13]15.4 III-V-group nitride crystals

Wed. Sep 18, 2024 9:00 AM - 12:30 PM JST
Wed. Sep 18, 2024 12:00 AM - 3:30 AM UTC
C42 (Hotel Nikko 4F)
Shugo Nitta(Nagoya Univ.), Shuhei Ichikawa(Osaka Univ.)
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9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18a-C42-1]RF-MBE growth and evaluation of thermoelectric properties of whole-content InGaN

〇Shota Hattori1, Tsutomu Araki1, Momoko Deura2 (1.Ritsumeikan Univ., 2.R-GIRO)
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9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[18a-C42-2]Simple Metal-Organic Vapor Phase Epitaxy Model Towards Improvement of Controllability of InxGa1-xN Alloy Composition

〇Masataka Imura1, Takanobu Hiroto1, Takaaki Mano1, Yuri Itokazu2, Masafumi Jo2 (1.NIMS, 2.RIKEN)
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9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18a-C42-3]Impact of He carrier gas on GaInN film growth by MOVPE

〇(M1)Yuki Arai1,2, Saito Tasuke1,2, Onuma Takeyosi2, Yamaguti Tomohiro2, Honda Tohru2, Sumiya Masatomo1 (1.NIMS, 2.Kogakuin Univ)
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9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18a-C42-4]Evaluation of GaN/GaInN quantum wells grown by MOVPE by photothermal deflection spectroscopy

〇(M2)Tasuke Saito1,2, Yuuki Arai1,2, Takeyoshi Onuma2, Tomohiro Yamaguchi2, Tohru Honda2, Masatomo Sumiya1 (1.NIMS, 2.Kogakuin Univ)
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10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18a-C42-5]Control of InN Mole Fraction in MOVPE Growth of AlGaInN

〇Yuto Yamada1, Takeru Kumabe1, Hirotaka Watanabe2, Shugo Nitta2, Yoshio Honda2,3,4, Hiroshi Amano2,3,4 (1.Nagoya Univ., 2.IMaSS Nagoya Univ., 3.D Center Nagoya Univ., 4.IAR Nagoya Univ)
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10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18a-C42-6]Growth pressure of GaInN quantum wells with high InN mole fractions on GaN substrates

〇(M2)Kotaro Nozu1, Naoki Shibahara1, Tetsuya Takeuchi1, Motoaki Iwaya1, Satoshi Kamiyama1, Kentaro Nonaka2, Yoshitaka Kuraoka2, Takashi Yoshino2 (1.Meijo Univ., 2.NGK INSULATORS)
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10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18a-C42-7]Dependence on distance from AlInN underlayer to GaInN quantum wells of PL intensity in GaInN quantum wells

〇Taichi Nishikawa1, Shoki Arakawa1, Mitsuki Yanagawa1, Naoki Shibahara1, Tetsuya Takeuchi1, Motoaki Iwaya1, Satoshi Kamiyama1, Kentaro Nonaka2, Yoshitaka Kuraoka2, Takashi Yoshino2 (1.Meijo Univ., 2.NGK Insulator, LTD.)
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11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18a-C42-8]Electrical properties of violet LEDs with Ga0.87In0.17N tunnel junctions

〇Hinata Uda1, Kazuki Osada1, Tetsuya Takeuchi1, Kamiyama Satoshi1, Iwaya Motoaki1, Tanaka Takayuki1 (1.Meijo Univ.)
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11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18a-C42-9]Electrical properties of npn structures with bottom GaN tunnel junctions

〇Kazuki Osada1, Hinata Uda1, Kenta Kobayashi1, Tetsuya Takeuchi1, Satoshi Kamiyama1, Motoaki Iwaya1 (1.Meijo Univ.)
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11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[18a-C42-10]Effect of underlying superlattice layer on the characteristics of InGaN-based red LEDs

〇Koji Okuno1, Koichi Goshonoo1, Masaki Ohya1 (1.Toyoda Gosei co. ltd.)
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11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18a-C42-11]Fabrication of GaInN-based RGB monolithic μLED arrays with red LED structures grown on GB-LED base layer by PSD.

〇Yuki Shimizu1, Naoki Hasegwa1, Keigo Imura1, Yoshinobu Suehiro1, Motoaki Iwaya1, Tetsuya Takeuchi1, Satoshi Kamiyama1, Kohei Ueno2, Hiroshi Fujioka2 (1.Fac.Sci.&Tech, Meijo Univ, 2.Institute of Industrial Science, The University of Tokyo)
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12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18a-C42-12]Fabrication of Stepless GaInN-based Monolithic μLED Arrays for Mounting

〇Naoki Hasegawa1, Yuki Shimizu1, Yoshinobu Suehiro1, Motoaki Iwaya1, Tetsuya Takeuchi1 (1.Meijo University)
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12:15 PM - 12:30 PM JST(3:15 AM - 3:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18a-C42-13]Development of MicroLED/Neural Electrode Hybrid Device

〇Gota Shinohara1, Ayumu Okui1, Atsushi Nishikawa2, Alexander Loesing2, Tasuku Kayama3, Nahoko Kuga3, Takuya Sasaki3, Hiroto Sekiguchi1 (1.Toyohashi Tech, 2.ALLOS, 3.Tohoku Univ.)
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