[18a-C43-1~9] 1.1 Interdisciplinary and General Physics

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[18a-C43-7] Ringing suppression of SiC MOSFET with passive PT-symmetry

〇Kenichi Yatsugi¹, Koshi Oishi¹, Hideo Iizuka¹ (1.Toyota Central R&D Labs., Inc.)

Keywords:

PT-symmetry,electric circuit,power devices

We show that parasitic ringing of SiC MOSFET can be damped effectively with an external RLC resonator coupled to the switching circuit. The external resonator is designed based on passive PT-symmetry. At the exceptional point, ringing energy is distributed effectively to the external resonator and damped.