[18a-P04-1~6] 3.12 Semiconductor optical devices

[18a-P04-2] Proposal and analysis of p-type near-infrared wavelength quantum cascade lasers using Si/CaF₂ heterostructures

〇Hyuma Suzuki¹, Zhiyuan Fan¹, Haibo Wang¹, Masahiro Watanabe¹ (1.Tokyo Tech.)

Keywords:

quantum cascade lasers,silicon photonics,silicon lasers

Silicon quantum cascade lasers (QCLs) have the potential to be light sources for silicon photonics. In this study, we report the first design of a p-type active layer (1.4 μm wavelength) for a QCL using calcium fluoride as the quantum well barrier material. Additionally, we demonstrated that the proposed structure can secure the current density required for laser oscillation by estimating the resonant tunneling current and threshold current density.