Presentation Information
[18a-P07-8]Incident beam current dependence of carrier effective diffusion length in AlGaN quantum well structures with different internal quantum efficiencies
〇Ryuhei Yamaguchi1, Satoshi Kurai1, Narihito Okada1, Ryota Akaike2, Hideto Miyake2, Yoichi Yamada1 (1.Yamaguchi Univ., 2.Mie Univ.)
Keywords:
AlGaN,cathodoluminescence,carrier diffusion length
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