Session Details
[18a-P07-1~12]15.4 III-V-group nitride crystals
Wed. Sep 18, 2024 9:30 AM - 11:30 AM JST
Wed. Sep 18, 2024 12:30 AM - 2:30 AM UTC
Wed. Sep 18, 2024 12:30 AM - 2:30 AM UTC
P07 (Exhibition Hall A)
[18a-P07-1]4-inch GaN on GaN epitaxial wafer grown by QF-HVPE
〇Shota Kaneki1, Taichiro Konno1, Hisashi Mori1, Hajime Fujikura1 (1.Sumitomo Chemical)
[18a-P07-2]Dependence of the annealing effect on its atmosphere for the low-pressure CVD grown hexagonal boron nitride thin films.
〇Akira Takemura1, Taiki Oishi1, Ruki Aoike1, Souma Ota1, Yuma Takahashi1, Yuko Kominami1, Kazuhiko Hara1,2,3 (1.Shizuoka Univ., 2.Medical Photonics Inst., 3.Shizuoka Electronics Inst.)
[18a-P07-3]Evaluation of polymorphism of BN thin films grown by low-pressure CVD
〇Soma Ota1, Ruki Aoike1, Yuma Takahashi1, Akira Takemura1, Hiroko Kominami1, Kazuhiko Hara2,3 (1.Shizuoka Univ., 2.Medical Photonics., 3.Elec. Res. Inst.)
[18a-P07-4]Carbon incorporation in hexagonal boron nitride thin films grown by low-pressure CVD using BCl3 as a source and its effect on the film properties
〇Ruki Aoike1, Taiki Oishi1, Soma Ota1, Akira Takemura1, Hiroko Kominami1, Kazuhiko Hara1,2,3 (1.Shizuoka Univ., 2.Medical photonics, 3.Elec. Res. Inst.)
[18a-P07-5]Effect of AlN Interlayer into GaInN/GaInN MQWs in Growth of Nanocolumn Crystal
〇Takumi Umemoto1, Ryuta Shindo1, Hiromi Akagawa1, Tomohiro Yamaguchi1, Takeyoshi Onuma1, Tohru Honda1, Rie Togashi2,3, Katsumi Kishino2,3 (1.Kougakuin Univ., 2.Sophia Univ., 3.Sophia Nanotech Center)
[18a-P07-6]Improving luminescence variation of nanocolumns with semi-polar faceted GaInN active layers
〇Yasuto Akatsuka1, Shunsuke Ishizawa1, Yasuto Kakemura1, Koichi Morozumi1, Hiromu Miyazawa1, Koichiro Akasaka1, Rie Togashi2, Katsumi Kishino2 (1.Seiko Epson Corp., 2.Sophia Nanotech.)
[18a-P07-7]Evaluation of anisotropy of refractive index of GaN thin film on ScAlMgO4 substrate using terahertz wave
〇Kaito Tsuchida1, Takashi Fujii1,2, Toshiyuki Iwamoto2, Momoko Deura1, Tsutomu Araki1 (1.Ritsumeikan Univ., 2.NIPPO PRECISION)
[18a-P07-8]Incident beam current dependence of carrier effective diffusion length in AlGaN quantum well structures with different internal quantum efficiencies
〇Ryuhei Yamaguchi1, Satoshi Kurai1, Narihito Okada1, Ryota Akaike2, Hideto Miyake2, Yoichi Yamada1 (1.Yamaguchi Univ., 2.Mie Univ.)
[18a-P07-9]Change of electrical properties of electrochemical energization AlGaN/GaN hetero structure
〇Ren Morita1, Hiroshi Fujioka2, Narihiko Maeda1 (1.Tokyo Univ. of Technology, 2.Inst. of Industrial Science, Univ. of Tokyo)
[18a-P07-10]Forming ohmic electrodes on the almost electron-depleted AlGaN/GaN heterostructures
〇Sho Shirasu1, Ren Morita1, Hiroshi Fujioka2, Narihiko Maeda1 (1.Tokyo Univ. of Technology, 2.Inst. of Industrial Science, Univ. of Tokyo)
[18a-P07-11]Growth of GaN layer by plasma-enhanced LPE method (I)
〇Syuto Mine1, Haruki Nakagawa1, Keisuke Yoshida1, Hiroyuki Shinoda1, Nobuki Mutsukura1 (1.Tokyo Denki Univ.)
[18a-P07-12]Growth of GaN by plasma-enhanced LPE method (II)
〇Haruki Nakagawa1, Syuto Mine1, Keisuke Yoshida1, Hiroyuki Shinoda1, Nobuki Mutsukura1 (1.Tokyo Denki Univ.)