[18p-A31-1~19] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18p-A31-13] Measurement of photoresist Surface Temperature during Ultra-fast Etching by Reactive Atmospheric-pressure Thermal Plasma Jet

〇(M2)Kyohei Matsumoto¹, Jiawen Yu¹, Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1.Graduate School of Advanced Science and Engineering, Hiroshima University)

Keywords:

plasma,etching,photoresist

Edge beads are formed on the edge of wafers after photoresist (PR) are coated by a spin coater, hinder the exposure process, and cause particles due to peeling, resulting in lower yields. Therefore, the EBR process, which removes the edge beads by using organic solvents, has been introduced. However, the reduction of carbon dioxide emissions associated with the final disposal of organic solvent wastewater is an issue that must be resolved to achieve carbon neutrality. We have reported a high etching rate of 61.5 µm/s by supplying oxygen radicals to PRs simultaneously with local heating by reactive atmospheric pressure thermal plasma jet (R-TPJ) irradiation. In this study, we investigated the relationship between surface temperature and ultra-fast etching of photoresist by reactive atmospheric-pressure thermal plasma jet.