[18p-A31-1~19] 8.2 Plasma deposition of thin film, plasma etching and surface treatment | The 85th JSAP Autumn Meeting 2024

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Session Details

Oral presentation8 Plasma Electronics : 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[18p-A31-1~19]8.2 Plasma deposition of thin film, plasma etching and surface treatment

Wed. Sep 18, 2024 1:30 PM - 6:30 PM JST
Wed. Sep 18, 2024 4:30 AM - 9:30 AM UTC

A31 (TOKI MESSE 3F)

Haruka Suzuki(Nagoya Univ.), Masanaga Fukasawa(AIST)

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1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[18p-A31-1]Discharge and thermal characteristics of atmospheric nitrogen plasma

〇JunSeok Oh¹, Tatsuru Shirafuji¹ (1.Osaka Metropol. Univ)

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1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[18p-A31-2]Functionalization of PTFE with Hydroxyl Groups Using the PE-MBF Method

〇Kohshi Taguchi¹, Tomikawa Mina¹, Yamahara Motohiro¹, Noborio Kazuyuki¹ (1.SAKIGAKE-Semiconductor Co., Ltd.)

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2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[18p-A31-3]Functionalization of PTFE Powder with Hydroxyl Groups via SAM Formation

〇Kohshi Taguchi¹, Tomikawa Mina¹, Yamahara Motohiro¹, Noborio Kazuyuki¹ (1.SAKIGAKE-Semiconductor Co., Ltd.)

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2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[18p-A31-4]Fluorination reaction of GaN surface using electron assisted Atomic Layer Etching

Yusuke Izumi¹, 〇Takayoshi Tsutsumi¹, Hiroki Kondo², Makoto Sekine¹, Kenji Ishikawa¹, Masaru Hori¹ (1.Nagoya Univ., 2.Kyushu Univ.)

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2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[18p-A31-5]Surface Reactions during Atomic Layer Etching of Platinum by Oxygen Plasma and Formic Acid Vapor

〇Kazuhiro Miwa¹, T.T.Nga Nguyen¹, Daijiro Akagi², Takeshi Okato², Masaru Hori¹, Kenji Ishikawa¹ (1.Nagoya Univ., 2.AGC Inc.)

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2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[18p-A31-6]Plasma-induced electronic defects ~ difference due to inert gas species~

〇Shota Nunomura¹, Kunihiro Kamataki², Kazunori Koga², Masaharu Shiratani² (1.AIST, 2.Kyushu Univ.)

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3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[18p-A31-7]Generation and recovery of plasma-induced defects ~ annealing gas effects~

〇Shota Nunomura¹, Takayoshi Tsutsumi², Masaru Hori² (1.AIST, 2.Naogya Univ.)

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3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18p-A31-8]Statistical Analysis of I–V Characteristic Changes by Plasma-Induced Damage in SiO₂/Si Structures

〇Shunya Kuronuma¹, Takahiro Goya¹, Keiichiro Urabe¹, Koji Eriguchi¹ (1.Kyoto Univ.)

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3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18p-A31-9]Dependence of Additive Gas Species on GaN Dry Etching Damage using Chlorine Plasma

〇Kohei Masuda¹, Takaya Ishino¹, Yoshifumi Zaizen¹, Katsuhisa Kugimiya¹, Yoshiya Hagimoto¹, Hayato Iwamoto¹ (1.Sony Semiconductor Solutions Corp.)

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3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18p-A31-10]Surface reactions of photo-assisted etching of gallium nitrides, GaN

〇(M2)Ryoto Takahashi¹, Ryusei Sakai¹, Kenji Ishikawa², Makoto Sekine², Takayoshi Tsutsumi², Masaru Hori² (1.Nagoya Univ., 2.Nagoya Univ. cLPS)

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4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18p-A31-11]Etching of tungsten-based mask materials by CF₃⁺ ion irradiation

〇Hojun Kang¹, Shunta Kawabata¹, Nicolas A. Mauchamp¹, Tomoko Ito¹, Erin Joy Capdos Tinacba¹, Song-Yun Kang², Jiwon Son², Dongkyu Lee², Kazuhiro Karahashi¹, Satoshi Hamaguchi¹ (1.Osaka Univ., 2.Samsung Electronics)

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4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18p-A31-12]Ruthenium (Ru) etching by energetic oxygen and chlorine ions

〇(M1)Takuma Yanagisawa¹, Tomoko Ito¹, Masaya Imai², Katsuya Miura², Miyako Matsui², Kazuhiro Karahashi¹, Satoshi Hamaguchi¹ (1.Osaka Univ., 2.R&D Group, Hitachi Ltd.)

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4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18p-A31-13]Measurement of photoresist Surface Temperature during Ultra-fast Etching by Reactive Atmospheric-pressure Thermal Plasma Jet

〇(M2)Kyohei Matsumoto¹, Jiawen Yu¹, Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1.Graduate School of Advanced Science and Engineering, Hiroshima University)

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5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18p-A31-14]Effects of Radical Sticking Probability on Transport in High-Aspect-Ratio Holes

〇(M1)Takumi Kurushima¹, Takayoshi Tsutsumi², Makoto Sekine², Masaru Hori², Kenji Ishikawa² (1.Nagoya Univ. Eng., 2.Nagoya Univ. cLPS)

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5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18p-A31-15]Self-limitation etching process of Si₃N₄ and Si using NF₃/SF₆ inductively coupled plasma

〇Kazuki Ozawa¹, Tetsuya Sato¹, Akitaka Shimizu² (1.Univ. of Yamanashi, 2.Tokyo Electron (TTS))

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5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardHighlighted Presentation

[18p-A31-16]Analysis of reaction mechanism of SiO₂ film during cryogenic etching using F₂/Ar/H₂ gas plasma

〇Yuma Kato¹, Junji Kataoka¹, Ryo Saito², Daiki Iino¹, Hiroyuki Fukumizu¹, Tetsuya Sato², Kazuaki Kurihara¹ (1.Kioxia Corp., 2.Yamanashi Univ.)

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5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18p-A31-17]RF bias dependence on low temperature etching of SiO₂by CF₄/H₂ plasma

〇Yusuke Imai¹, Shih-Nan Hsiao², Makoto Sekine², Takayoshi Tsutsumi², Kenji Ishikawa², Masaru Hori² (1.Nagoya U. Eng., 2.Center for Low-temperature Plasma Science)

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6:00 PM - 6:15 PM JST(9:00 AM - 9:15 AM UTC)

[18p-A31-18]Low temperature HF/CH₃OH mixture gas etching of Plasma TEOS film

〇TSUBASA IMAMURA¹, Masaki Yamada¹ (1.Hitachi R&D)

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6:15 PM - 6:30 PM JST(9:15 AM - 9:30 AM UTC)

[18p-A31-19]Selective etching of SiO₂ over polycrystalline Si using PF₃/H₂ plasmas

〇ChihYu Ma¹, Shihnan Hsiao¹, Nikolay Britun¹, Makoto Sekine¹, Masaru Hori¹ (1.Nagoya Univ. Center for Low-temperature Plasma Sciences)

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Session Details

[18p-A31-1~19]8.2 Plasma deposition of thin film, plasma etching and surface treatment

[18p-A31-1]Discharge and thermal characteristics of atmospheric nitrogen plasma

[18p-A31-2]Functionalization of PTFE with Hydroxyl Groups Using the PE-MBF Method

[18p-A31-3]Functionalization of PTFE Powder with Hydroxyl Groups via SAM Formation

[18p-A31-4]Fluorination reaction of GaN surface using electron assisted Atomic Layer Etching

[18p-A31-5]Surface Reactions during Atomic Layer Etching of Platinum by Oxygen Plasma and Formic Acid Vapor

[18p-A31-6]Plasma-induced electronic defects ~ difference due to inert gas species~

[18p-A31-7]Generation and recovery of plasma-induced defects ~ annealing gas effects~

[18p-A31-8]Statistical Analysis of I–V Characteristic Changes by Plasma-Induced Damage in SiO2/Si Structures

[18p-A31-9]Dependence of Additive Gas Species on GaN Dry Etching Damage using Chlorine Plasma

[18p-A31-10]Surface reactions of photo-assisted etching of gallium nitrides, GaN

[18p-A31-11]Etching of tungsten-based mask materials by CF3+ ion irradiation

[18p-A31-12]Ruthenium (Ru) etching by energetic oxygen and chlorine ions

[18p-A31-13]Measurement of photoresist Surface Temperature during Ultra-fast Etching by Reactive Atmospheric-pressure Thermal Plasma Jet

[18p-A31-14]Effects of Radical Sticking Probability on Transport in High-Aspect-Ratio Holes

[18p-A31-15]Self-limitation etching process of Si3N4 and Si using NF3/SF6 inductively coupled plasma

[18p-A31-16]Analysis of reaction mechanism of SiO2 film during cryogenic etching using F2/Ar/H2 gas plasma

[18p-A31-17]RF bias dependence on low temperature etching of SiO2 by CF4/H2 plasma

[18p-A31-18]Low temperature HF/CH3OH mixture gas etching of Plasma TEOS film

[18p-A31-19]Selective etching of SiO2 over polycrystalline Si using PF3/H2 plasmas

[18p-A31-8]Statistical Analysis of I–V Characteristic Changes by Plasma-Induced Damage in SiO₂/Si Structures

[18p-A31-11]Etching of tungsten-based mask materials by CF₃⁺ ion irradiation

[18p-A31-15]Self-limitation etching process of Si₃N₄ and Si using NF₃/SF₆ inductively coupled plasma

[18p-A31-16]Analysis of reaction mechanism of SiO₂ film during cryogenic etching using F₂/Ar/H₂ gas plasma

[18p-A31-17]RF bias dependence on low temperature etching of SiO₂by CF₄/H₂ plasma

[18p-A31-18]Low temperature HF/CH₃OH mixture gas etching of Plasma TEOS film

[18p-A31-19]Selective etching of SiO₂ over polycrystalline Si using PF₃/H₂ plasmas