The 85th JSAP Autumn Meeting 2024
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Session Details

Oral presentation8 Plasma Electronics : 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[18p-A31-1~19]8.2 Plasma deposition of thin film, plasma etching and surface treatment

Wed. Sep 18, 2024 1:30 PM - 6:30 PM JST
Wed. Sep 18, 2024 4:30 AM - 9:30 AM UTC
A31 (TOKI MESSE 3F)
Haruka Suzuki(Nagoya Univ.), Masanaga Fukasawa(AIST)
1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[18p-A31-1]Discharge and thermal characteristics of atmospheric nitrogen plasma

〇JunSeok Oh1, Tatsuru Shirafuji1 (1.Osaka Metropol. Univ)
Comment()
1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[18p-A31-2]Functionalization of PTFE with Hydroxyl Groups Using the PE-MBF Method

〇Kohshi Taguchi1, Tomikawa Mina1, Yamahara Motohiro1, Noborio Kazuyuki1 (1.SAKIGAKE-Semiconductor Co., Ltd.)
Comment()
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[18p-A31-3]Functionalization of PTFE Powder with Hydroxyl Groups via SAM Formation

〇Kohshi Taguchi1, Tomikawa Mina1, Yamahara Motohiro1, Noborio Kazuyuki1 (1.SAKIGAKE-Semiconductor Co., Ltd.)
Comment()
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[18p-A31-4]Fluorination reaction of GaN surface using electron assisted Atomic Layer Etching

Yusuke Izumi1, 〇Takayoshi Tsutsumi1, Hiroki Kondo2, Makoto Sekine1, Kenji Ishikawa1, Masaru Hori1 (1.Nagoya Univ., 2.Kyushu Univ.)
Comment()
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[18p-A31-5]Surface Reactions during Atomic Layer Etching of Platinum by Oxygen Plasma and Formic Acid Vapor

〇Kazuhiro Miwa1, T.T.Nga Nguyen1, Daijiro Akagi2, Takeshi Okato2, Masaru Hori1, Kenji Ishikawa1 (1.Nagoya Univ., 2.AGC Inc.)
Comment()
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[18p-A31-6]Plasma-induced electronic defects ~ difference due to inert gas species~

〇Shota Nunomura1, Kunihiro Kamataki2, Kazunori Koga2, Masaharu Shiratani2 (1.AIST, 2.Kyushu Univ.)
Comment()
3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[18p-A31-7]Generation and recovery of plasma-induced defects ~ annealing gas effects~

〇Shota Nunomura1, Takayoshi Tsutsumi2, Masaru Hori2 (1.AIST, 2.Naogya Univ.)
Comment()
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18p-A31-8]Statistical Analysis of I–V Characteristic Changes by Plasma-Induced Damage in SiO2/Si Structures

〇Shunya Kuronuma1, Takahiro Goya1, Keiichiro Urabe1, Koji Eriguchi1 (1.Kyoto Univ.)
Comment()
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18p-A31-9]Dependence of Additive Gas Species on GaN Dry Etching Damage using Chlorine Plasma

〇Kohei Masuda1, Takaya Ishino1, Yoshifumi Zaizen1, Katsuhisa Kugimiya1, Yoshiya Hagimoto1, Hayato Iwamoto1 (1.Sony Semiconductor Solutions Corp.)
Comment()
3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18p-A31-10]Surface reactions of photo-assisted etching of gallium nitrides, GaN

〇(M2)Ryoto Takahashi1, Ryusei Sakai1, Kenji Ishikawa2, Makoto Sekine2, Takayoshi Tsutsumi2, Masaru Hori2 (1.Nagoya Univ., 2.Nagoya Univ. cLPS)
Comment()
4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18p-A31-11]Etching of tungsten-based mask materials by CF3+ ion irradiation

〇Hojun Kang1, Shunta Kawabata1, Nicolas A. Mauchamp1, Tomoko Ito1, Erin Joy Capdos Tinacba1, Song-Yun Kang2, Jiwon Son2, Dongkyu Lee2, Kazuhiro Karahashi1, Satoshi Hamaguchi1 (1.Osaka Univ., 2.Samsung Electronics)
Comment()
4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18p-A31-12]Ruthenium (Ru) etching by energetic oxygen and chlorine ions

〇(M1)Takuma Yanagisawa1, Tomoko Ito1, Masaya Imai2, Katsuya Miura2, Miyako Matsui2, Kazuhiro Karahashi1, Satoshi Hamaguchi1 (1.Osaka Univ., 2.R&D Group, Hitachi Ltd.)
Comment()
4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18p-A31-13]Measurement of photoresist Surface Temperature during Ultra-fast Etching by Reactive Atmospheric-pressure Thermal Plasma Jet

〇(M2)Kyohei Matsumoto1, Jiawen Yu1, Hiroaki Hanafusa1, Seiichiro Higashi1 (1.Graduate School of Advanced Science and Engineering, Hiroshima University)
Comment()
5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18p-A31-14]Effects of Radical Sticking Probability on Transport in High-Aspect-Ratio Holes

〇(M1)Takumi Kurushima1, Takayoshi Tsutsumi2, Makoto Sekine2, Masaru Hori2, Kenji Ishikawa2 (1.Nagoya Univ. Eng., 2.Nagoya Univ. cLPS)
Comment()
5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18p-A31-15]Self-limitation etching process of Si3N4 and Si using NF3/SF6 inductively coupled plasma

〇Kazuki Ozawa1, Tetsuya Sato1, Akitaka Shimizu2 (1.Univ. of Yamanashi, 2.Tokyo Electron (TTS))
Comment()
5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardHighlighted Presentation

[18p-A31-16]Analysis of reaction mechanism of SiO2 film during cryogenic etching using F2/Ar/H2 gas plasma

〇Yuma Kato1, Junji Kataoka1, Ryo Saito2, Daiki Iino1, Hiroyuki Fukumizu1, Tetsuya Sato2, Kazuaki Kurihara1 (1.Kioxia Corp., 2.Yamanashi Univ.)
Comment()
5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18p-A31-17]RF bias dependence on low temperature etching of SiO2 by CF4/H2 plasma

〇Yusuke Imai1, Shih-Nan Hsiao2, Makoto Sekine2, Takayoshi Tsutsumi2, Kenji Ishikawa2, Masaru Hori2 (1.Nagoya U. Eng., 2.Center for Low-temperature Plasma Science)
Comment()
6:00 PM - 6:15 PM JST(9:00 AM - 9:15 AM UTC)

[18p-A31-18]Low temperature HF/CH3OH mixture gas etching of Plasma TEOS film

〇TSUBASA IMAMURA1, Masaki Yamada1 (1.Hitachi R&D)
Comment()
6:15 PM - 6:30 PM JST(9:15 AM - 9:30 AM UTC)

[18p-A31-19]Selective etching of SiO2 over polycrystalline Si using PF3/H2 plasmas

〇ChihYu Ma1, Shihnan Hsiao1, Nikolay Britun1, Makoto Sekine1, Masaru Hori1 (1.Nagoya Univ. Center for Low-temperature Plasma Sciences)
Comment()
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