[18p-A36-1~11] Application of Advanced Ion/Electron Microscopy for Future Nanoscale Materials and Devices

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)English Presentation

[18p-A36-8] Direct Patterning in Ultrathin Silicon Nanosheets Utilizing Helium Ion Beam Irradiation

〇Yukinori Morita¹, Kensuke Inoue², Ryuichi Sugie², Shinichi Ogawa¹ (1.AIST, 2.TRC)

Keywords:

Helium Ion Microscopy,Silicon nanosheet,nanopore

Helium Ion Microscopy (HIM) has been used as an electron microscopy using secondary electrons generated by focused helium (He) ion beam irradiation onto the sample. It is also possible to modify material properties and perform etching processing by tuning the energy and dose of the He⁺ beam. In this work, ultra-thin silicon nanosheets were irradiated with the focused He⁺ beam and aim to perform nanofabrication with nanometer-level position control without using lithography technology. Using an extremely uniformly thinned silicon layer, we verified the possibility of forming nanopore arrays with positional control, like two-dimensional materials.