The 85th JSAP Autumn Meeting 2024
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Session Details

Symposium (Oral)Symposium : Application of Advanced Ion/Electron Microscopy for Future Nanoscale Materials and Devices

[18p-A36-1~11]Application of Advanced Ion/Electron Microscopy for Future Nanoscale Materials and Devices

Wed. Sep 18, 2024 1:30 PM - 6:15 PM JST
Wed. Sep 18, 2024 4:30 AM - 9:15 AM UTC
A36 (TOKI MESSE 3F)
Shinichi Ogawa(AIST), Yuji Otsuka(Toray Research Center, Inc.)
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1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)English Presentation

[18p-A36-1]Application of Advanced ion / electron microscopy for future nano scale materials and devices -Introduction to the Symposium-

〇Shinichi Ogawa1, Jun Taniguchi2 (1.AIST, 2.TUS)
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1:45 PM - 2:15 PM JST(4:45 AM - 5:15 AM UTC)English Presentation

[18p-A36-2]From Dual Damascene to Semi-Damascene and new materials: opportunities for characterization in interconnects

〇Zsolt Tokei1 (1.IMEC)
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2:15 PM - 2:45 PM JST(5:15 AM - 5:45 AM UTC)English Presentation

[18p-A36-3]Evaluation of hydrogen-gas-field-ionization ion source and its application

〇Shinichi Matsubara1, Hiroyasu Shichi1, Tomihiro Hashizume2 (1.Hitachi, Ltd. CDS, 2.Hitachi, Ltd. CER)
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2:45 PM - 3:15 PM JST(5:45 AM - 6:15 AM UTC)English Presentation

[18p-A36-4]Nanoscale High-Transition Temperature Josephson Junctions and SQUIDs

〇Shane Cybart1 (1.UC Riverside)
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3:15 PM - 3:45 PM JST(6:15 AM - 6:45 AM UTC)English Presentation

[18p-A36-5]Nanosized quantum sensor spots in hexagonal boron nitride created using helium ion microscopy

〇Kento Sasaki1 (1.UTokyo)
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4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)English Presentation

[18p-A36-6]Charge trap memory based on MoS2 with He+-irradiated h-BN as a trapping layer

〇Mahito Yamamoto1, Takuya Iwasaki2, Keiji Ueno3, Takashi Taniguchi2, Kenji Watanabe2, Yukinori Morita4, Shinichi Ogawa4, Yutaka Wakayama2, Shu Nakaharai5 (1.Kansai Univ., 2.NIMS, 3.Saitama Univ., 4.AIST, 5.Tokyo Univ. Tech.)
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4:15 PM - 4:45 PM JST(7:15 AM - 7:45 AM UTC)English Presentation

[18p-A36-7]Graphene phononic devices for thermal rectification with He Ion beam technology

〇Fayong Liu1, Kaidi Sun1, Qianyu Jia1, Haiyong Zheng1, Manoharan Muruganathan2, Hiroshi Mizuta2 (1.Ocean Univ. of China, 2.JAIST)
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4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)English Presentation

[18p-A36-8]Direct Patterning in Ultrathin Silicon Nanosheets Utilizing Helium Ion Beam Irradiation

〇Yukinori Morita1, Kensuke Inoue2, Ryuichi Sugie2, Shinichi Ogawa1 (1.AIST, 2.TRC)
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5:00 PM - 5:30 PM JST(8:00 AM - 8:30 AM UTC)English Presentation

[18p-A36-9]In-situ and precise atomic-scale transmission electron microscopy for electronic materials

〇Yukio Sato1 (1.Kumamoto Univ.)
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5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)English Presentation

[18p-A36-10]Mapping Dielectric Response of Materials by Time-Resolved Electron Holography

〇Yoh Iwasaki1, Toshiaki Tanigaki2, Keiko Shimada1, Ken Harada1, Daisuke Shindo1 (1.RIKEN, 2.Hitachi, Ltd.)
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5:45 PM - 6:15 PM JST(8:45 AM - 9:15 AM UTC)English Presentation

[18p-A36-11]Characterization of monolayer film with an advanced ULV-SEM

〇Takaya Nakamura1, Masayasu Nagoshi1, Kaoru Sato1, Hiroki Ago2 (1.JFE Techno-Research Corp., 2.Faculty of Engineering Sciences, Kyushu University)
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