[18p-A37-1~11] 17.2 Graphene

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18p-A37-3] Catalyst-free directly graphene growth on Si substrate by using of HPPS plasma

〇Yuto Ooishi¹, Masanori Shinohara², Fumihiko Maeda³, Takashi Matsumoto⁴ (1.Grad. Sch. Eng. Fukuoka Univ., 2.Fukuoka Univ., 3.Fukuoka Inst. of Technol., 4.Tokyo Electron Technology Solutions Ltd.)

Keywords:

graphene,HiPIMS/HPPS,catalyst-free

The aim of this study is to grow graphene directly on Si without catalysts, in order to use graphene as wiring material of Si-LSI. HPPS plasma, generated by applying high power pulse to carbon target, is used as plasma source of PECVD. Styrene (C8H8) is used as a carbon source in PECVD. We succeeded in the direct growth of graphene on Si at 600 ℃. We will present our latest data of low-temperature growth in this presentation.