Presentation Information
[18p-A37-5]Strong Nb-C interaction in graphene grown by thermal decomposition of NbC
〇Yuanzhi Ni1, Takahiro Ito2, Wataru Norimatsu3 (1.Nagoya Univ., 2.NUSR., 3.Waseda Univ.)
Keywords:
graphene,ARPES
Graphene is a two-dimensional material where carbon atoms are arranged in a honeycomb lattice, and has a linear band structure called Dirac cone at the K points in reciprocal space. NbC, on the other hand, is also a Dirac semimetal with Dirac cone along the Γ-X line.
The (111) surface of NbC, which has a cubic NaCl structure, exhibits threefold symmetry and an Nb-Nb interatomic distance of 3.16 Å. Therefore, it is expected that a graphene/NbC/SiC heteroepitaxial structure can be fabricated on a 4H-SiC single crystal substrate with a lattice constant of 3.08 Å.
In this study, we fabricated graphene/NbC/SiC heterostructures by thermal decomposition of NbC thin films on SiC substrates. The electronic states of its surface were investigated, and Dirac cone(ED=-3eV) arising from the strong interaction between electrons in graphene and the NbC top surface were observed.
The (111) surface of NbC, which has a cubic NaCl structure, exhibits threefold symmetry and an Nb-Nb interatomic distance of 3.16 Å. Therefore, it is expected that a graphene/NbC/SiC heteroepitaxial structure can be fabricated on a 4H-SiC single crystal substrate with a lattice constant of 3.08 Å.
In this study, we fabricated graphene/NbC/SiC heterostructures by thermal decomposition of NbC thin films on SiC substrates. The electronic states of its surface were investigated, and Dirac cone(ED=-3eV) arising from the strong interaction between electrons in graphene and the NbC top surface were observed.
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