[18p-B1-1~20] 13.9 Compound solar cells

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[18p-B1-3] Development of integrated Zn-Ge-O n-layer for CIGSe solar cells

〇YUTARO YAMADA¹, Yota Suzuki¹, Takahito Nishimura¹, Akira Yamada¹ (1.Tokyo Tech.)

Keywords:

Zn-Ge-O,buffer layer,SCAPS

Recently, n-type buffer layers with low electron affinity are required for CIGSe solar cells. In our previous study, we focused on Zn-Ge-O as a buffer layer with low electron affinity, because the conduction band offset at the Zn-Ge-O/ZnO:B interface becomes large when Zn-Ge-O is used as a buffer layer, which is thought to inhibit electron flow. In this study, we investigated the effect of the above offset on the performance of CIGSe solar cells and report the results.