The 85th JSAP Autumn Meeting 2024
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Session Details

Oral presentation13 Semiconductors : 13.9 Compound solar cells

[18p-B1-1~20]13.9 Compound solar cells

Wed. Sep 18, 2024 1:00 PM - 6:45 PM JST
Wed. Sep 18, 2024 4:00 AM - 9:45 AM UTC
B1 (Exhibition Hall B)
Kentaroh Watanabe(Univ. of Tokyo), Tamotsu Okamoto(Natl. Inst. of Tech., Kisarazu Col.)
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1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)

[18p-B1-1]Investigation of “optoiontronic carrier dynamics” during water splitting using CIGS photoelectrode

〇Kana Ueda1, Mutsumi Sugiyama1,2 (1.Tokyo Univ. Sci., 2.RIST)
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1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)

[18p-B1-2]Deposition of (In,Ga)2S3 Thin Films via Mist–CVD Method

〇Yohei Araki1, Akihiro Funaki1, Takahito Nishimura1, Akira Yamada1 (1.Tokyo Tech.)
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1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[18p-B1-3]Development of integrated Zn-Ge-O n-layer for CIGSe solar cells

〇YUTARO YAMADA1, Yota Suzuki1, Takahito Nishimura1, Akira Yamada1 (1.Tokyo Tech.)
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1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[18p-B1-4]Structural design of CIGSe optical absorption layer by Bayesian Optimization

〇Ryuki Kasai1, Akihiro Funaki1, Takahito Nishimira1, Akira Yamada1 (1.Tokyo Tech.)
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2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[18p-B1-5]Surface electronic structure of Mo-back electrode in CIS-based solar cells

〇Motoya Oba1, Yukiko Kamikawa2, Takehiko Nagai2, Shogo Ishizuka2, Jiro Nishinaga2, Hitoshi Tampo2, Masami Aono1, Tetsuji Okuda1, Norio Terada1,2 (1.Kagoshima Univ., 2.AIST.)
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2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[18p-B1-6]Two-step photon up-conversion solar cells using a MAPbI3/Si heterostructure

〇(M2)Shunya Tokunaga1, Ryohei Onitsuka1, Shigeo Asahi1, Takashi Kita1 (1.Kobe Univ.)
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2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[18p-B1-7]Intraband Transitions Induced by Below-Bandgap Photoexcitation at CsPbBr3/GaAs Heterointerface

〇(DC)Hambalee Mahamu1, Shigeo Asahi1, Takashi Kita1 (1.Kobe Univ.)
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3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[18p-B1-8]Gain characteristics of intraband infrared optical transition induced by Quantum Dots in Two-Step Photon Up-Conversion Solar Cells

〇(M2)sho yamamoto1, daichi nagai1, shigeo asahi1, takashi kita1 (1.Kobe Univ.)
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3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[18p-B1-9]Theoretical power density of thermoradiative diode with an intermediate band (II)

〇Yukihiro Harada1, Takashi Kita1 (1.Kobe Univ.)
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3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[18p-B1-10]Dual-Wavelength Laser Power Converters Compatible with Solar Cells Using Triplet-Triplet Annihilation and Singlet Fission of Molecular Systems

〇Yasuhiko Takeda1 (1.Toyota Central R&D Labs.)
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4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[18p-B1-11]Investigation of the optical loss of InGaN solar cells for optical wireless power transmission

〇Junichi Suzuki1, Ryusei Takahashi1, Yuto Kaneko1, Reo Aoyama1, Masahiro Koga1, Shunsuke Shibui1, Takahiro Noguchi1, Shunki Hayashi1, Takahiro Fujisawa2, Shiori Ii3, Ruka Watanabe3, Toshihiko Fukamachi4, Koichi Naniwae4, Makoto Miyoshi2, Tetsuya Takeuchi3, Satoshi Kamiyama3, Shiro Uchida1 (1.Chiba Inst, 2.Nagoya Inst, 3.Meijo Univ, 4.Ushio Inc)
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4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[18p-B1-12]Temperature characteristics of InGaP solar cells with DBR structure for optical wireless power transmission

〇Ryusei Takahashi1, Junichi Suzuki1, Shunsuke Kawamura1, Kouichi Akahane2, Shiro Uchida1 (1.Chiba Inst., 2.NICT)
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4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[18p-B1-13]Temperature dependency of 3-junction InGaAs solar cells for optical fiber power transmission

〇Reo Aoyama1, Junichi Suzuki1, Moeka Chiba1, Shunsuke Shibui1, Kosuke Watanabe1, Ryota Warigaya1, Kouichi Akahane2, Shiro Uchida1 (1.Chiba Institute of Technology, 2.National Institute of Information and Communications Technology)
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4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[18p-B1-14]Fabrication of patterned dielectric back contacts for InGaAs thermophotovoltaic cells

〇Masaki Date1,2, Ryuji Oshima2, Yasushi Shoji2, Hitoshi Sai2, Makoto Shimizu3, Takeyoshi Sugaya2, Shuhei Yagi1, Hiroyuki Yaguchi1 (1.Saitama Univ., 2.AIST, 3.Graduate School of Engineering, Tohoku Univ.)
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5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[18p-B1-15]Study on Radiation Degradation of Electron-Induced Current in an InGaP Solar Cell Type Gamma-ray Dosimeter

〇Mitsuru Imaizumi1, Tetsuya Nakamura2, Yasuki Okuno3 (1.Sanjo City Univ., 2.JAXA, 3.RIKEN)
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5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[18p-B1-16]Reducing bonding resistance between dissimilar semiconductor substrates using RTWB

〇Shuntaro Fujii1, Reo Aoyama1, Yuta Nishidate1, Moeka Chiba1, Shuto Fujiwara1, Keigo Saito1, Ryuga Kikuchi1, Kosuke Watanabe1, Kouichi Akahane2, Shiro Uchida1 (1.Chiba Inst., 2.NICT)
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5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)English Presentation

[18p-B1-17]Electrical properties of wafer-bonded interfaces applicable for multijunction p-on-n solar cells

〇Hassanet Sodabanlu1, Depu Ma2, Kentaroh Watanabe1, Yoshiaki Nakano2, Masakazu Sugiyama1,2 (1.RCAST, UTokyo, 2.School of Eng., UTokyo)
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6:00 PM - 6:15 PM JST(9:00 AM - 9:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18p-B1-18]Efficiency enhancement of InGaP/GaAs/InxGa1-xAs//InyGa1-yAs four-junction solar cells by improving current mismatch

〇(M2)Takashi Shimasaki1, Kentaroh Watanabe2, Hassanet Sodabanlu2, Yoshiaki Nakano1, Masakazu Sugiyama1,2 (1.The Univ. of Tokyohe, 2.RCAST)
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6:15 PM - 6:30 PM JST(9:15 AM - 9:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18p-B1-19]Dependence of diode’s ideality factor on incident light intensity in solar cells

〇Meita Asami1, Kentaroh Watanabe1, Yoshiaki Nakano2, Masakazu Sugiyama1,2 (1.RCAST, 2.The Univ. of Tokyo)
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6:30 PM - 6:45 PM JST(9:30 AM - 9:45 AM UTC)

[18p-B1-20]Anisotropic etching and annealing for germanium-on-nothing structure

〇(M2)Wenbo Fan1, Ryuji Oshima2, Yasushi Shoji2, Takeyoshi Sugaya2, Shuhei Yagi1, Hiroyuki Yaguchi1 (1.Saitama Univ., 2.AIST)
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