[18p-B2-1~15] 4.6 Terahertz Photonics

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[18p-B2-5] Temperature Dependence Analysis for β-Ga₂O₃ Studied by Terahertz Time-Domain Spectroscopy

〇(D)Shuang Liu¹, Verdad C. Agulto¹, Toshiyuki Iwamoto^1,2, Kosaku Kato¹, Hisashi Murakami³, Yoshinao Kumagai³, Masashi Yoshimura¹, Makoto Nakajima¹ (1.Osaka Univ. ILE, 2.Nippo Prec., 3.TAT Appli. Chem.)

Keywords:

THz-TDS,B-Ga2O3,optical physics

The temperature-dependent properties of an epitaxial β-Ga₂O₃ film and a semi-insulating β-Ga₂O₃ substrate were studied. Terahertz Time-Domain Spectroscopy (THz-TDS) was used to measure the transmittance of the substrate and the epilayer in the 0.2-3.0 THz region at different temperature from 100-400 K. Here we show the refractive index properties along the [100] axis. The refractive index spectra can be fitted to the Drude-Lorentz model, and the carrier transport and phonon properties are deduced using the fitting parameters. Our findings show that THz-TDS can be a useful noninvasive measurement method for wide-gap semiconductors and provide the fundamental parameters of the β-Ga₂O₃ material.