講演情報

[18p-B2-5]Temperature Dependence Analysis for β-Ga2O3 Studied by Terahertz Time-Domain Spectroscopy

〇(D)Shuang Liu1, Verdad C. Agulto1, Toshiyuki Iwamoto1,2, Kosaku Kato1, Hisashi Murakami3, Yoshinao Kumagai3, Masashi Yoshimura1, Makoto Nakajima1 (1.Osaka Univ. ILE, 2.Nippo Prec., 3.TAT Appli. Chem.)

キーワード:

THz-TDS、B-Ga2O3、optical physics

The temperature-dependent properties of an epitaxial β-Ga2O3 film and a semi-insulating β-Ga2O3 substrate were studied. Terahertz Time-Domain Spectroscopy (THz-TDS) was used to measure the transmittance of the substrate and the epilayer in the 0.2-3.0 THz region at different temperature from 100-400 K. Here we show the refractive index properties along the [100] axis. The refractive index spectra can be fitted to the Drude-Lorentz model, and the carrier transport and phonon properties are deduced using the fitting parameters. Our findings show that THz-TDS can be a useful noninvasive measurement method for wide-gap semiconductors and provide the fundamental parameters of the β-Ga2O3 material.

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