[18p-C42-1~7] 2D materials and their integrated circuit and electronic device applications

1:30 PM - 2:00 PM JST(4:30 AM - 5:00 AM UTC)

[18p-C42-1] 2D Material and Device Technologies for 3D-Stacked FET

〇Hitoshi Wakabayashi¹ (1.IIR, Tokyo Tech)

Keywords:

Semiconductor,2D

2D Material and Device Technologies for 3D-Stacked FET is going to be discussed.