Presentation Information
[18p-C42-3]Possible applications of 2D material devices and related integration challenges
〇Tom Schram1 (1.imec)
Keywords:
MX2,WS2,300 mm Si Fab
The introduction of 2D materials allows a range of applications and prospects for future devices. Graphene based devices enable sensing and optical applications. Due to their specific properties, metal dichalcogenides (MX2) like MoS2, WS2 and WSe2 are major candidates for replacement of Si for future scaled devices, including future CFET devices.
Some of these properties impose specific restrictions on the device architecture and the used integration methods, such that the typical integration used for Si based devices can no longer be used. These challenges will be discussed with the accompanying solutions.
In the first part of the presentation, the integration of a single sheet MX2 based device will be discussed, restricting the options to future proof 300 mm Si fab compatible processes compatible with scaled devices. In the 2nd part of the presentation, an extrapolation will be made towards the extra challenges and process needs for the more complex case of a stacked nanosheet.
Some of these properties impose specific restrictions on the device architecture and the used integration methods, such that the typical integration used for Si based devices can no longer be used. These challenges will be discussed with the accompanying solutions.
In the first part of the presentation, the integration of a single sheet MX2 based device will be discussed, restricting the options to future proof 300 mm Si fab compatible processes compatible with scaled devices. In the 2nd part of the presentation, an extrapolation will be made towards the extra challenges and process needs for the more complex case of a stacked nanosheet.
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