[18p-D61-1~21] 10.4 Spintronics in semiconductor, topological material, superconductor, and multiferroics

5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[18p-D61-16] Spin-valve effect with two easy-magnetization axes in a spin-MOSFET
based on perovskite-oxide La_0.67Sr_0.33MnO₃ with a LaMnO₃ buffer layer

〇Aoi Nakamura¹, Tatsuro Endo¹, Masaaki Tanaka^1,2, Shinobu Ohya^1,2 (1.Tokyo Univ., 2.CSRN, Tokyo Univ.)

Keywords:

spintronics,spin-valve,perovskite oxides

We fabricated a lateral spin-MOSFET using ferromagnetic perovskites-oxide La_0.67Sr_0.33MnO₃ with a LaMnO₃ buffer layer grown on a SrTiO₃ substrate. We observed large magnetoresistance ratios in two-axis orientations at 3.5 K.