[18p-D61-1~21] 10.4 半導体・トポロジカル・超伝導・強相関スピントロニクス

17:15 〜 17:30奨励賞エントリー英語発表

[18p-D61-16] Spin-valve effect with two easy-magnetization axes in a spin-MOSFET
based on perovskite-oxide La_0.67Sr_0.33MnO₃ with a LaMnO₃ buffer layer

〇Aoi Nakamura¹, Tatsuro Endo¹, Masaaki Tanaka^1,2, Shinobu Ohya^1,2 (1.Tokyo Univ., 2.CSRN, Tokyo Univ.)

キーワード：

spintronics、spin-valve、perovskite oxides

We fabricated a lateral spin-MOSFET using ferromagnetic perovskites-oxide La_0.67Sr_0.33MnO₃ with a LaMnO₃ buffer layer grown on a SrTiO₃ substrate. We observed large magnetoresistance ratios in two-axis orientations at 3.5 K.