Presentation Information
[18p-P01-5]Evaluation of TlBr Thin Film Formed by Vacuum Evaporation
〇(D)Kohei Toyoda1,2, Junichi Nishizawa1,3,4, Katsuyuki Takagi2,3, Hiroki Kase3, Toru Aoki1,2,3 (1.Shizuoka Univ. CMMP, 2.ANSeeN Inc., 3.Shizuoka Univ. RIE, 4.Hamamatsu Univ.S.M.)
Keywords:
Thallium Bromide,Vacuum Evaporation,Polycrystalline
Thallium bromide (TlBr) is a semiconductor material with a band gap of 2.68 eV. TlBr has a large atomic number (81, 35) and a high density (7.56 g/cm 3), and therefore has a high absorption efficiency for X-rays and gamma rays.Due to these excellent physical properties, TlBr is being researched as a suitable material for semiconductor detectors that operate at room temperature.
TlBr has a low boiling point and can be easily volatilized by resistance heating in a vacuum atmosphere, so it is possible to form a thin film by vacuum deposition. Film formation by the vacuum deposition method may be suitable for the manufacture of X-ray FPDs (Flat Panel Detectors) that require a large area. In this study, in order to implement TlBr thin films formed by vacuum deposition as radiation detectors, we evaluated the differences in crystal grain size, surface properties, electrical properties, and X-ray detection properties when the deposition conditions were changed.
TlBr has a low boiling point and can be easily volatilized by resistance heating in a vacuum atmosphere, so it is possible to form a thin film by vacuum deposition. Film formation by the vacuum deposition method may be suitable for the manufacture of X-ray FPDs (Flat Panel Detectors) that require a large area. In this study, in order to implement TlBr thin films formed by vacuum deposition as radiation detectors, we evaluated the differences in crystal grain size, surface properties, electrical properties, and X-ray detection properties when the deposition conditions were changed.
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