[18p-P02-1~30] 6.3 Oxide electronics

[18p-P02-28] Current-voltage characteristics of ultra-thin film InGaZnO transistors in vacuum

〇(M1)Takato Nihongi¹, Takumi Maeda¹, Yoshiaki Hattori¹, Masatoshi Kitamura¹ (1.Kobe Univ.)

Keywords:

thin film transistor,IGZO,gas sensor

TFTs with a 10 nm IGZO semiconductor layer were fabricated by sputtering, and current-voltage characteristics were evaluated in vacuum and air at VG = -1.0 V and VD = 1.0 V. ID was 55 μA and 252 μA in air and vacuum, respectively, about five times higher. Mobility was 5.6 cm²V^-1S^-1 in air and 29.3 cm²V^-1S^-1 in vacuum, with lower mobility in air. The findings obtained in this study could be applied to gas sensors.