[18p-P02-1~30] 6.3 Oxide electronics

[18p-P02-29] Post-annealing effect of p-channel thin-film transistors with SnO_x as the channel layer

〇(M1)Motonori Taki¹, Takato Nihongi¹, Yoshiaki Hattori¹, Masatoshi Kitamura¹ (1.Kobe Univ)

Keywords:

pMOS,SnO,oxide transistor

We fabricated TFTs using sputtered SnOx as the channel layer and evaluated their current-voltage characteristics after post-annealing. The current on/off ratio in the gate voltage range 10 to −10 V was 4.6×10³, which is relatively high for a p-channel TFT. Additionally, the mobility in the linear region is 1.1 cm² V^-1 s^-1. Further improvement of the characteristics can be expected by optimizing the conditions in the future.