[18p-P02-1~30] 6.3 Oxide electronics

[18p-P02-6] Investigation of switching characteristics of ReRAM using transparent conductive oxide electrodes

〇Takahiro Ishii¹, Takeo Ohno², Takeru Okada¹ (1.Tohoku Univ., 2.Oita Univ.)

Keywords:

ReRAM,zinc oxide,transparent electrode

The demand for transparent devices is high due to the development of informatization and the spread of IoT devices, and transparent memory is also gaining importance. Resistive random access memory (ReRAM) shows promise as a nonvolatile memory with a simple structure. However, challenges remain in material supply and cost of transparent electrodes. In this study, we fabricated transparent ReRAM based on safe and inexpensive zinc oxide. The influence of the physical properties of the electrode material on the device characteristics was studied.