[18p-P03-1~11] 6.6 Probe Microscopy

[18p-P03-5] Carrier distribution measurements of semiconductors by SNDM potentiometry with output-polarity control

〇Yuji Miyato¹, Hiroki Nozaki², Norihito Mayama² (1.Ryukoku Univ., 2.Toshiba Nanoanalysis)

Keywords:

AFM,semiconductor,SNDM

For the reliable and quantitative analysis of semiconductor carrier distribution by scanning nonlinear dielectric microscopy (SNDM), we have focused on SNDM potentiometry and attempted to carry out bias-voltage feedback control using d²C/dV² signals. In this report, we paid attention to the fact that the polarity switches in both the dC/dV and d²C/dV² signals of SNDM, depending on the semiconductor type (p-type or n-type), and we achieved the measurements of both p-type and n-type semiconductors by devising a control method.