[18p-P07-1~8] 6.1 Ferroelectric thin films

[18p-P07-2] BiFeO₃ Buffer Layer Effects on Epitaxial (K,Na)NbO₃ Thin Films Grown on Si
Substrates

〇JINGWEI HE¹, Isaku Kanno¹ (1.Kobe University)

Keywords:

piezoelectric material,buffer layer,thin film

KNN thin films are expected to be applied to lead-free piezoelectric MEMS as a lead-free piezoelectric thin film material because of their high Curie temperature and excellent piezoelectric properties. K and Na are volatile and easily diffuse, so non-uniform composition and defects are easily generated during KNN deposition, resulting in increased dielectric loss and reduced piezoelectric properties. In this study, we investigated the effect of introducing a BFO buffer layer to suppress the diffusion of alkali elements to the substrate side. Epitaxial KNN/BFO films were fabricated on Si substrates and dielectric and piezoelectric properties are reported.