[18p-P07-1~8] 6.1 Ferroelectric thin films

[18p-P07-4] Crystallization Atmosphere Dependence of CeO_x/Y-HZO Stacked Structures Fabricated by Solution Process

〇Yuzhong Wang¹, Eisuke Tokumitsu¹ (1.JAIST)

Keywords:

HfO2 based ferroelectric material,CeOx,solution process

In this study, Y-HZO films and CeOx/Y-HZO stacked structures were fabricated by the solution process under different atmospheres and pressures, and ferroelectricity was evaluated. In the case of the Y-HZO film, ferroelectricity was confirmed with crystallization annealing at 50 Pa, but ferroelectricity deteriorated with crystallization annealing at 1 atm of oxygen and 1 atm of nitrogen. On the other hand, in the case of the CeOx/Y-HZO stacked structure, good ferroelectricity was obtained in any atmosphere of crystallization annealing.