[18p-P08-1~18] 12.4 Organic light-emitting devices and organic transistors

[18p-P08-3] Direct observation of gate voltage dependence in charge carrier mobility of organic semiconductors

〇(PC)Wookjin Choi¹, Wakana Matsuda¹, Shu Seki¹ (1.Kyoto Univ.)

Keywords:

organic semiconductor,charge carrier mobility,nonlinear voltage dependence

The gate voltage dependence in charge carrier mobility of organic semiconductors in field effect transistor (FET) was investigated by time resolved microwave conductivity (TRMC) meaurement. Altough TRMC is the AC method, which is free from the contact resistance or the minority carrier trapping which are traditionally regarded as the origin of the nonlinearity of the carrier mobility, the clear nonlinearity was observed from TRMC measurement. Concerted analysis with atomic force microscopy (AFM) and X-ray diffractometry (XRD) revealed that the origin of the nonlinearity observed in TRMC measurement is the surface disorder in organic semiconductors.