[19a-B2-1~8] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[19a-B2-3] Characteristics of GaAs/GaNAs core-multishell multiple quantum well nanowires grown by molecular beam epitaxy

〇Ryoga Iida^1,2, Kaito Nakama^1,2, Hidetoshi Hashimoto^1,2, Keisuke Minehisa^1,2, Fumitaro Ishikawa² (1.Hokkaido Univ., 2.Hokkaido Univ. RCIQE)

Keywords:

molecular beam epitaxy,nanowire,multiple quantum well