[19a-B2-1~8] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy | The 85th JSAP Autumn Meeting 2024

Advanced Search

Session Details

Oral presentation15 Crystal Engineering : 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[19a-B2-1~8]15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Thu. Sep 19, 2024 9:15 AM - 11:30 AM JST
Thu. Sep 19, 2024 12:15 AM - 2:30 AM UTC

B2 (Exhibition Hall B)

Masashi Akabori(JAIST), Shigeo Asahi(Kobe Univ.)

Download PDF Zoom

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19a-B2-1]GaAs/AlGaAs core-shell nanowires on 2-inch Si substrate showing high light absorption/emission/thermal properties

〇Keisuke Minehisa^1,2, Hidetoshi Hashimoto^1,2, Kaito Nakama^1,2, Hiroto Kise¹, Shino Sato¹, Junichi Takayama¹, Satoshi Hiura¹, Akihiro Murayama¹, Fumitaro Ishikawa^1,2 (1.Hokkaido Univ., 2.Hokkaido Univ. RCIQE)

Download PDFComment()

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[19a-B2-2]Effect of Mask Pattern on GaAs Nanowire Nucleation on Patterned Si Substrate by MBE

〇Kaito Nakama^1,2, Akio Higo³, Fumitaro Ishikawa^1,2 (1.Hokkaido Univ., 2.Hokkaido Univ. RCIQE, 3.d.lab, the Univ. of Tokyo)

Download PDFComment()

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[19a-B2-3]Characteristics of GaAs/GaNAs core-multishell multiple quantum well nanowires grown by molecular beam epitaxy

〇Ryoga Iida^1,2, Kaito Nakama^1,2, Hidetoshi Hashimoto^1,2, Keisuke Minehisa^1,2, Fumitaro Ishikawa² (1.Hokkaido Univ., 2.Hokkaido Univ. RCIQE)

Download PDFComment()

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[19a-B2-4]Effect of annealing conditions on optical properties in dilute nitride semiconductor nanowires

〇Hidetoshi Hashimoto^1,2, Ryoga Iida^1,2, Takuto Goto^1,2, Keisuke Minehisa^1,2, Kaito Nakama^1,2, Fumitaro Ishikawa² (1.Hokkaido Univ. Info., 2.Hokkaido Univ. RCIQE)

Download PDFComment()

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[19a-B2-5]Exceptional large lattice deformation in highly strained InP/InAs nanowire heterostructures with 3.2% lattice mismatch

〇Guoqiang Zhang¹, Tanaka Yusuke¹, Hibino Hiroki², Gotoh Hideki³, Sanada Haruki¹ (1.NTT BRL, 2.Kwansei Gakuin Univ., 3.Hiroshima Univ.)

Download PDFComment()

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[19a-B2-6]Selective-area growth of Wurtzite InP/AlInP core-shell nanowires

〇(D)ZIYE ZHENG^1,2, Yuki Azuma^1,2, Junichi Motohisa^1,2, Katsuhiro Tomioka^1,2 (1.Hokkaido Univ, 2.RCIQE)

Download PDFComment()

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[19a-B2-7]Characterization of InP crystal phase transition heterojunction vertical transistor

〇Ryosei Uchida¹, Yuki Azuma¹, Yuki Takeda¹, Ziye Zheng¹, Junichi Motohisa¹, Katsuhiro Tomioka¹ (1.Hokkaido Univ.)

Download PDFComment()

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[19a-B2-8]Characterization of selective-area growth of InAs nanostructures on metal opening mask

〇Yuki Takeda¹, Yuki Azuma¹, Ziye Zheng¹, Junichi Motohisa¹, Katsuhiro Tomioka¹ (1.Hokkaido Univ.)

Download PDFComment()

Back to Category List