[19a-B2-1~8] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[19a-B2-7] Characterization of InP crystal phase transition heterojunction vertical transistor

〇Ryosei Uchida¹, Yuki Azuma¹, Yuki Takeda¹, Ziye Zheng¹, Junichi Motohisa¹, Katsuhiro Tomioka¹ (1.Hokkaido Univ.)

Keywords:

semiconductor,nanowire