[19a-C42-1~9] 15.4 III-V-group nitride crystals

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[19a-C42-6] Growth of InGaN-based MQW on strain-relaxed InGaN intermediate layer via THVPE

〇Chiho Yamada¹, Satoru Nakai¹, Hisashi Murakami¹ (1.TUAT)

Keywords:

InGaN,MQW,strain-relaxed layer