The 85th JSAP Autumn Meeting 2024
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Session Details

Oral presentation15 Crystal Engineering : 15.4 III-V-group nitride crystals

[19a-C42-1~9]15.4 III-V-group nitride crystals

Thu. Sep 19, 2024 9:00 AM - 11:30 AM JST
Thu. Sep 19, 2024 12:00 AM - 2:30 AM UTC
C42 (Hotel Nikko 4F)
Atsushi Tanaka(Nagoya Univ.), Shigeyoshi Usami(阪大)
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9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19a-C42-1]Reduction of polycrystals in low dislocation GaN crystal growth using meltback in the Na-flux method

〇Shogo Washida1, Masayuki Imanishi1, Kosuke Murakami1, Shigeyoshi Usami1, Mihoko Maruyama1, Masashi Yoshimura1,2, Yusuke Mori1 (1.Osaka Univ., 2.ILE, Osaka Univ.)
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9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[19a-C42-2]A Study on the Classification of Threading Dislocations in GaN Substrates by Spot Size using X-ray Topography High-Resolution Images

〇Masakazu Kanechika1, Satoshi Yamaguchi2, Yoshihiro Kishida2, Kazuhisa Isegawa2, Kohsuke Kitazumi2, Yasuji Kimoto2 (1.Nagoya Univ., 2.Toyota Central R&D Labs., Inc.)
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9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[19a-C42-3]CMP Properties of OVPE-GaN Substrates with High Oxygen Concentration

〇Jinta Nakase1, Fuminori Takami1, Junichi Takino1, Tomoaki Sumi1, Yoshio Okayama1 (1.Panasonic Holdings Corp.)
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9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19a-C42-4]Characteristics on electrochemical etching of high carrier concentration OVPE-GaN

〇(B)Sogo Yokoi1, Shigeyoshi Usami1, Masayuki Imanishi1, Tomoaki Sumi2, Junichi Takino2, Yoshio Okayama2, Ryota Ito3, Masahiko Hata4, Atsushi Tanaka5, Yoshio Honda5, Hiroshi Amano5, Mihoko Maruyama1, Masashi Yoshimura6, Yusuke Mori1 (1.Grad. Sch. of Eng., Osaka Univ., 2.Panasonic Holdings Corp., 3.Sumitomo Chemical Co., Ltd., 4.Itochu Plastics Inc., 5.IMaSS Nagoya Univ., 6.ILE, Osaka Univ.)
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10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[19a-C42-5]Effect of H2 annealing on pit formation in HVPE-AlN growth on 4H-SiC(000-1)

〇Arashi Sato1, Hisashi Murakami1 (1.TUAT)
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10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[19a-C42-6]Growth of InGaN-based MQW on strain-relaxed InGaN intermediate layer via THVPE

〇Chiho Yamada1, Satoru Nakai1, Hisashi Murakami1 (1.TUAT)
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10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19a-C42-7]Sputter-growth of GaN thin Films utilizing Bayesian optimization

〇Akinori Saito1, Riki Kanetake1, Naoomi Yamada1 (1.Chubu Univ.)
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11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[19a-C42-8]Pulsed Sputtering Growth of GaN film using Sintered Target

〇(M1)Kohei Nomura1, Koo Bando2, Yoshihiro Ueoka2, Yoshiro Kususe2, Mesuda Masami2, Masahiro Uemukai1, Tomoyuki Tanikawa1, Ryuji Katayama1 (1.Osaka Univ, 2.Tosoh Corp)
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11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[19a-C42-9]Fabrication and evaluation of Mg-containing GaN sputtering targets

〇Erisa Kano1, Koo Bando1, Hidehiko Misaki1, Yoshihiro Ueoka1, Masami Mesuda1 (1.Tosoh Corporation)
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