[19a-D63-1~9] 9.3 Nanoelectronics

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[19a-D63-7] Cross-correlation measurement of single-electron thermal motion in capacitively-coupled nanometer-scale dots

〇Kensaku Chida¹, Antoine Andrieux¹, Katsuhiko Nishiguchi¹ (1.NTT BRL)

Keywords:

Silicon nanodevices,Electron counting statistics,Cross-correlation measurement

We performed the cross-correlation measurement of thermal single-electron motion in two electrostatically coupled silicon nanodots. The cross-correlation function corresponds with the strength of repulsive Coulomb interactions between the two nanodots.