[19p-A31-1~18] 17.3 Layered materials

6:00 PM - 6:15 PM JST(9:00 AM - 9:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-A31-18] Device Structure Analysis for Light Absorption Enhancement of Multilayer MoS₂

〇Myeongok Kim¹, Yoshitaka Okada¹ (1.RCAST, UTokyo)

Keywords:

MoS2,Transfer Matrix Method,Light Absorption

MoS₂ is a promising material for opto-electronic applications, but its high reflection and indirect bandgap with increasing thickness make it challenging to achieve high light absorption. In this research, the effects of anti-reflection coating and back mirror on multi-layer MoS₂ absorption are investigated with transfer matrix method. Vertical structure with 20 nm thick MoS₂ is analyzed with varied SiO₂ anti-reflection coating thickness or back mirror material. It is found that absorption more than 80 % near excitonic state can be realized with 80 nm SiO₂/20 nm MoS₂/200 nm Ag structure. Fabry-Pérot interference with the anti-reflection coating enables more than three times higher photocurrent density under AM1.5G illumination with this structure compared to a bare MoS₂ film.