The 85th JSAP Autumn Meeting 2024
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Session Details

Oral presentation17 Nanocarbon and Two-Dimensional Materials : 17.3 Layered materials

[19p-A31-1~18]17.3 Layered materials

Thu. Sep 19, 2024 1:30 PM - 6:15 PM JST
Thu. Sep 19, 2024 4:30 AM - 9:15 AM UTC
A31 (TOKI MESSE 3F)
Shu Nakaharai(Tokyo Univ. of Technology), Yoshitaka Taniyasu(NTT)
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1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[19p-A31-1][The 56th Young Scientist Presentation Award Speech] Bulk photovoltaic effect device in the artificial hetero-interface using 2D magnetic materials

〇Shuichi Asada1, Keisuke Shinokita1, Kazunari Matsuda1 (1.IAE, Kyoto Univ.)
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1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[19p-A31-2]Gate control of spin injection polarity in 2D semiconductor transistors

〇Akiko Ueda1, Yukie Kitaoka1, Hiroshi Imamura1 (1.AIST)
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2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[19p-A31-3]Development of thin flexible organic photodiode with Ti3C2Tx MXene electron transport layer

〇Kosei Sasaki1, Hirotaka Ooi2, Tomoyuki Yokota1 (1.Univ of Tokyo, 2.Japan Material Technologies Corporation)
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2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[19p-A31-4]The improvement of WSe2 p-FET by applying sputtered Pt electrodes

〇(DC)Ryuichi Nakajima1, Tomonori Nishimura1, Kaito Kanahashi1, Keiji Ueno2, Yasumitsu Miyata3, Shogo Hatayama4, Yuta Saito4,6, Toshihumi Irisawa4, Takashi Taniguchi5, Kenji Watanabe5, Kosuke Nagashio1 (1.The Univ. of Tokyo, 2.Saitama Univ., 3.Tokyo Metropolitan Univ., 4.AIST, 5.NIMS, 6.Tohoku Univ.)
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2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[19p-A31-5]Fabrication of n-type MoS2 by atomic hydrogenation and TFT application

〇Kecheng Li1, Chenghao Xu1, Masamichi Tsuchida1, Kousaku Shimizu1 (1.Nihon Univ.)
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2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[19p-A31-6]Study of nonvolatile memory using sumanene molecules and structure dependence

〇Ryoichi Kawai1, Yoshiharu Kirihara1, Eito Ashihara1, Ryosuke Katsumata1, Reika Fujie1, Sorato Mikawa1, Hiroshi Nohira1, Ryousuke Ishikawa1, Yuichiro Mitani1 (1.Tokyo City Univ.)
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3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardHighlighted Presentation

[19p-A31-7]High current density in electric double layer light-emitting devices of WSe2 monolayers

〇koshi Oi1, Ou Hau1, Jiang Pu2, Takahik Endo3, Yasumitsu Miyata3, Taishi Takenobu1 (1.Nagoya Univ., 2.Tokyo Tech Univ., 3.Tokyo Metropolitan Univ.)
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3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-A31-8]Spin-Conserving Resonant Tunneling in Graphene/TMD/Graphene Junction

〇(M2)Jimpei Kawase1, Yuta Seo1, Momoko Onodera1, Yijin Zhang1, Kenji Watanabe2, Takashi Taniguchi2, Rai Moriya1, Tomoki Machida1 (1.IIS Univ. Tokyo, 2.NIMS)
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3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-A31-9]Interlayer excitons in WS2/WSe2 heterobilayers grown on hexagonal boron nitride

〇(D)Yui Tamogami1, Wenjin Zhang1, Yusuke Nakanishi1, Kenji Watanabe2, Takashi Taniguchi2, Ryo Kitaura2, Yasumitsu Miyata1 (1.Tokyo Metro. Univ., 2.NIMS)
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4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[19p-A31-10][INVITED] Introduction of Se defects on the surface by UV-O3 exposure and vacuum annealing to realize ALD on WSe2

〇Takuya Kojima1, Daisuke Horiba1, Mengnan Ke1, Nobuyuki Aoki1 (1.Chiba Univ.)
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4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-A31-11]Selection of transport agents for CVT synthesis for tunnel FET source material

〇Toshinari Sugiyama1, Satoru Morito2, Tomonori Nishimura1, Kaito Kanahashi1, Keiji Ueno2, Kosuke Nagashio1 (1.UTokyo, 2.Saitama Univ.)
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4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-A31-12]Evaluation of Nb Impurity Uniformity in Monolayer MoS2 Transfer Film Using ToF-SIMS

〇Itsuki Tanaka1, Tomonori Nishimura1, Kaito Kanahashi1, Keiji Ueno2, Kosuke Nagashio1 (1.UTokyo, 2.Saitama Univ.)
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4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[19p-A31-13]Structural and material properties evaluation of double-folded four-layer MoS2

〇Shotaro Yotsuya1, Takahiko Endo2, Yasumitsu Miyata2, Daisuke Kiriya1 (1.Univ. Tokyo, 2.Tokyo Metro. Univ.)
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5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)English Presentation

[19p-A31-14]Electrostatic properties of boron nitride nanotubes

〇Nadia Sultana1, Yanlin Gao1, Mina Maruyama1, Susumu Okada1 (1.Univ. of Tsukuba)
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5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-A31-15]Consideration of the transport in donor molecule/MoS2 heterostructure

〇Keigo Matsuyama1, Hikaru Okuma1, Kazunori Ueno1, Daisuke Kiriya1 (1.The Univ. of Tokyo)
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5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-A31-16]Electrical transport properties of multilayer NbxMo1-XS2/MoS2
in-plane heterostructures on hBN substrate

〇(M2)Shota Toida1, Shota Yamaguchi1, Takahiko Endo1, Yusuke Nkanishi1, Kenji Watanabe2, Takashi Taniguchi2, Kosuke Nagashio3, Yasumitu Miyata1 (1.Tokyo Metro Univ., 2.NIMS, 3.Tokyo Univ.)
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5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)

[19p-A31-17]Degenerately doped monolayer MoS2 using surface treatment by Amine based molecule

〇Takashi Kobayashi1, Puneet Jain1, Daisuke Kiriya1 (1.Univ. of Tokyo)
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6:00 PM - 6:15 PM JST(9:00 AM - 9:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-A31-18]Device Structure Analysis for Light Absorption Enhancement of Multilayer MoS2

〇Myeongok Kim1, Yoshitaka Okada1 (1.RCAST, UTokyo)
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