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[19p-A32-1]Identification of hyperfine level structure in 167Er3+:Y2SiO5 crystal

〇(DC)Shouichirou Yasui1,2, Tomohiro Inaba1, Atsushi Isizawa3, Kenichi Hitatchi1, Hiroo Omi4, Kyuma Matsuura2, Reina Kaji2, Takehiko Tawara3, Satoru Adachi2, Xuejun Xu1, Haruki Sanada1 (1.NTT BRL, 2.Grad. Sch. Eng., Hokkaido Univ., 3.Nihon Univ., 4.Yamato Univ.)
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Keywords:

Optical quantum memory,Rare earth ion doped crystal,Spectral hole burning

167Er3+:Y2SiO5 crystals accessible by telecommunication wavelength photons have attracted attention as a promising quantum memory material, but quantitative evaluation of the level spacing and population of 167Er ions has been difficult due to the complexity of their hyperfine level structure. In this study, we experimentally identified the level spacing by the spectral hole burning (SHB) method and simulated the obtained SHB spectra. As a result, the SHB spectrum was reproduced, and both theoretical and experimental identification of the hyperfine level spacing was achieved.

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