[19p-A37-1~15] 3.7 Optical measurement, instrumentation, and sensor

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-A37-7] Internal strain measurement of silicon by stimulated Raman scattering microscopy at telecom wavelengths

〇(DC)Yuki Sano¹, Kenichi Oguchi², Keigo Tsuji¹, Yoshiro Mita¹, Yasuyuki Ozeki¹ (1.Univ. Tokyo, 2.Tokyo Univ. of Science)

Keywords:

Silicon,Stress,Stimulated Raman scattering

To achieve higher density in semiconductor devices, the development of three-dimensional integration technology and new processing techniques is actively studied. In this context, the impact of residual stress in silicon substrates on these devices is a significant concern. However, conventional technologies cannot measure the strain inside silicon substrates in a non-destructive manner with high spatial resolution. In this study, we successfully achieved Raman imaging of the strain inside silicon substrates by realizing stimulated Raman scattering microscopy using a light source in the telecommunication wavelength band.