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[19p-C302-5][The 56th Young Scientist Presentation Award Speech] Fabrication of double heterostructures of CsPbBr3/CsSnBr3/CsPbBr3 by physical vapor codeposition

〇Shohei Toyota1, Zihao Liu1, Yang Yemu1, Masato Soutome2, Tomonori Matsushita2, Takashi Kondo1,2 (1.School of Eng./ Univ. of Tokyo, 2.RCAST/ Univ. of Tokyo)
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Keywords:

perovskite semiconductors

Recently, metal halide perovskites (ABX3) have attracted much attention as materials for optoelectronic devices due to their broad bandgap tunability by composition control and long optical carrier lifetime. We have previously reported that B-site substituted double-heterostructure (CsPbBr3/ CsSnBr3/CsPbBr3) are stable for a long time and also construct a Type-I Quantum Well. In this study, we fabricated a double heterostructure of CsPbBr3/ CsSnBr3/ CsPbBr3 in the several CsSnBr3 layer thickness and evaluated its compositional distribution (XPS), crystallinity, optical and luminescence properties.

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