[19p-C41-1~24] 13.7 Compound and power devices, process technology and characterization

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-C41-12] Comprehensive survey of impurity-vacancy pairs in 4H-SiC via ab initio calculations

〇(M2)Sosuke Iwamoto¹, Heiji Watanabe¹, Takuma Kobayashi¹ (1.Osaka Univ.)

Keywords:

SiC,ab initio calculation,impurity-vacancy pairs