The 85th JSAP Autumn Meeting 2024
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Session Details

Oral presentation13 Semiconductors : 13.7 Compound and power devices, process technology and characterization

[19p-C41-1~24]13.7 Compound and power devices, process technology and characterization

Thu. Sep 19, 2024 1:00 PM - 7:30 PM JST
Thu. Sep 19, 2024 4:00 AM - 10:30 AM UTC
C41 (Hotel Nikko 4F)
Dai Okamoto(Toyama Prefectural Univ. ), Hiroki Imabayashi(Fukui Univ.)
1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)

[19p-C41-1]Modified El-Hoshy−Gibbons model reproducing the Z1 oscillation of electronic stopping cross sections in Si and W for low-velocity ions and its application to 4H-SiC

〇Kazuhiro Mochizuki1, Tomoaki Nishimura1, Tomoyoshi Mishima1 (1.Hosei Univ.)
Comment()
1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)

[19p-C41-2]Suppression of stacking-fault expansion in SiC by helium implantation

〇Masashi Kato1, Tong Li1, Shunta Harada2, Hitoshi Sakane3 (1.NITech, 2.Nagoya Univ., 3.SHI ATEX Co. Ltd.)
Comment()
1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[19p-C41-3]Depth distribution of point defects in H or He ion implanted SiC diodes

〇Masashi Kato1, Tong Li1, Shunta Harada2, Hitoshi Sakane3 (1.NITech, 2.Nagoya Univ., 3.SHI ATEX Co. Ltd.)
Comment()
1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[19p-C41-4]Observation of Baking Temperature Influence on Interfacial Thermal Resistance at Polymer/SiC Interface Using Optical-Interference Contactless Thermometry (OICT)

〇Jiawen Yu1, Hiroaki Hanafusa1, Seiichiro Higashi1 (1.Hiroshima Univ.)
Comment()
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[19p-C41-5]Evaluation of Long-term Stability for Silicon-cap-annealed Contact at High-temperture

〇Takahito Fukuzawa1, Hiroaki Hanafusa1, Seiichiro Higashi1 (1.Hiroshima Univ.)
Comment()
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[19p-C41-6]In-situ Heating TEM Observation of Metal / SiC Contacts

〇SHOHEI HAYASHI1, Junji Senzaki2 (1.Toray Research Center, 2.AIST)
Comment()
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-C41-7]Pt ohmic contacts on p-type SiC with low contact resistivity formed by 600°C-annealing process

〇Kotaro Kuwahara1, Mitsuaki Kaneko1, Tsunenobu Kimoto1 (1.Kyoto Univ.)
Comment()
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-C41-8]Influences of oxidation and hydrogen etching on surface morphology of SiC(0001)

〇Shinji Kamihata1, Takuma Kobayashi1, Heiji Watanabe1 (1.Osaka Univ.)
Comment()
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-C41-9]Investigation of color centers at SiO2/SiC interfaces formed by various oxidation temperatures

〇(B)Yu Kaneko1, Takato Nakanuma1, Haruko Toyama2, Kosuke Tahara2, Katsuhiro Kutsuki2, Heiji Watanabe1, Takuma Kobayashi1 (1.Osaka Univ., 2.Toyota Central R&D Labs., Inc.)
Comment()
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-C41-10]Impacts of Oxidation Temperature and Oxygen Partial Pressure on Luminescence Intensity of Color Centers at SiO2/SiC Interfaces

〇Kentaro Onishi1, Takato Nakanuma1, Haruko Toyama2, Kosuke Tahara2, Katsuhiro Kutsuki2, Heiji Watanabe1, Takuma Kobayashi1 (1.Osaka Univ., 2.Toyota Central R&D Labs., Inc.)
Comment()
3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-C41-11]Impacts of annealing ambient and time on the color center density at SiO2/SiC interfaces

〇Takato Nakanuma1, Kosuke Tahara2, Haruko Toyama2, Katsuhiro Kutsuki2, Heiji Watanabe1, Takuma Kobayashi1 (1.Osaka University, 2.Toyota Central R&D Labs., Inc.)
Comment()
4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-C41-12]Comprehensive survey of impurity-vacancy pairs in 4H-SiC via ab initio calculations

〇(M2)Sosuke Iwamoto1, Heiji Watanabe1, Takuma Kobayashi1 (1.Osaka Univ.)
Comment()
4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-C41-13]Impact of Electron Irradiation on Channel Properties of SiC and Si MOSFETs

〇(M2)Kotaro Matsuki1, Yoshihito Ichikawa2, Yuichi Onozawa2, Noriyuki Iwamuro1, Hiroshi Yano1 (1.Univ. of Tsukuba, 2.Fuji Electric)
Comment()
4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[19p-C41-14]Interface Structure Dependence of Electronic States in 4H-SiC MOS Inversion Layers

〇(DC)Sachika Nagamizo1, Hajime Tanaka1, Nobuya Mori1 (1.Osaka Univ.)
Comment()
4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-C41-15]A quantitative analysis of the quantum confinement effect and the energy distribution of interface states in SiC MOSFETs

〇Xilun Chi1, Koji Ito1, Mitsuaki Kaneko1, Tsunenobu Kimoto1 (1.Kyoto Univ.)
Comment()
5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-C41-16]Threshold Voltage and Mobility in Counter-doped SiC P-channel MOSFETs

〇Ryoma Ito1, Akira Inoue1, Kyota Mikami1, Mitsuaki Kaneko1, Tsunenobu Kimoto1 (1.Kyoto Univ.)
Comment()
5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[19p-C41-17]Doping-dependent fixed charges in SiC MOS

〇Kyota Mikami1, Mitsuaki Kaneko1, Tsunenobu Kimoto1 (1.Kyoto Univ.)
Comment()
5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)

[19p-C41-18]First-principles analysis on electronic-structure of SiC/SiO2 interface after NO annealing.

〇(M1)Kosei Sugiyama1, Nahoto Funaki1, Mitsuharu Uemoto1, Tomoya Ono1 (1.Kobe Univ.)
Comment()
6:00 PM - 6:15 PM JST(9:00 AM - 9:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-C41-19]Interface properties and reliability of NO-nitrided SiC(0-33-8) MOS structures

〇Hayato Iwamoto1, Takuma Kobayashi1, Hirohisa Hirai2, Mitsuru Sometani1,2, Mitsuo Okamoto2, Heiji Watanabe1 (1.Osaka Univ., 2.AIST)
Comment()
6:15 PM - 6:30 PM JST(9:15 AM - 9:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-C41-20]Effect of Post Annealing on SiO2/SiC Structures Formed by Plasma Nitridation of SiC Surface Followed by SiO2 Deposition

〇Hiroki Fujimoto1, Takuma Kobayashi1, Heiji Watanabe1 (1.Osaka Univ.)
Comment()
6:30 PM - 6:45 PM JST(9:30 AM - 9:45 AM UTC)

[19p-C41-21]Influence of Al2O3 cap layer on nitrogen incorporation kinetics at 4H-SiC/SiO2 interface

〇Tatsumi Nakashima1, Takashi Onaya1, Koji Kita1 (1.GSFS, The Univ. of Tokyo)
Comment()
6:45 PM - 7:00 PM JST(9:45 AM - 10:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-C41-22]Luminescence and threshold voltage shift in SiC MOSFETs under gate AC stress

〇(M1)Ryosuke Shingo1, Yuya Enjoji1, Noriyuki Iwamuro1, Hiroshi Yano1 (1.Univ. of Tsukuba)
Comment()
7:00 PM - 7:15 PM JST(10:00 AM - 10:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-C41-23]Degradation of channel mobility in SiC MOSFETs with negative gate bias stress

〇Keiji Hachiken1, Takuma Kobayashi1, Hirohisa Hirai2, Mitsuru Sometani1,2, Mitsuo Okamoto2, Heiji Watanabe1 (1.Osaka Univ., 2.AIST)
Comment()
7:15 PM - 7:30 PM JST(10:15 AM - 10:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-C41-24]Improved gate bias stress stability of SiC MOSFETs formed by high temperature oxidation

〇(M1)Qiang Chen1, Takuma Kobayashi1, Hirohisa Hirai2, Mitsuru Sometani1,2, Mitsuo Okamoto2, Heiji Watanabe1 (1.Osaka Univ., 2.AIST)
Comment()
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