[19p-C41-1~24] 13.7 Compound and power devices, process technology and characterization | The 85th JSAP Autumn Meeting 2024

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Oral presentation13 Semiconductors : 13.7 Compound and power devices, process technology and characterization

[19p-C41-1~24]13.7 Compound and power devices, process technology and characterization

Thu. Sep 19, 2024 1:00 PM - 7:30 PM JST
Thu. Sep 19, 2024 4:00 AM - 10:30 AM UTC

C41 (Hotel Nikko 4F)

Dai Okamoto(Toyama Prefectural Univ. ), Hiroki Imabayashi(Fukui Univ.)

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1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)

[19p-C41-1]Modified El-Hoshy−Gibbons model reproducing the Z₁ oscillation of electronic stopping cross sections in Si and W for low-velocity ions and its application to 4H-SiC

〇Kazuhiro Mochizuki¹, Tomoaki Nishimura¹, Tomoyoshi Mishima¹ (1.Hosei Univ.)

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1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)

[19p-C41-2]Suppression of stacking-fault expansion in SiC by helium implantation

〇Masashi Kato¹, Tong Li¹, Shunta Harada², Hitoshi Sakane³ (1.NITech, 2.Nagoya Univ., 3.SHI ATEX Co. Ltd.)

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1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[19p-C41-3]Depth distribution of point defects in H or He ion implanted SiC diodes

〇Masashi Kato¹, Tong Li¹, Shunta Harada², Hitoshi Sakane³ (1.NITech, 2.Nagoya Univ., 3.SHI ATEX Co. Ltd.)

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1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[19p-C41-4]Observation of Baking Temperature Influence on Interfacial Thermal Resistance at Polymer/SiC Interface Using Optical-Interference Contactless Thermometry (OICT)

〇Jiawen Yu¹, Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1.Hiroshima Univ.)

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2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[19p-C41-5]Evaluation of Long-term Stability for Silicon-cap-annealed Contact at High-temperture

〇Takahito Fukuzawa¹, Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1.Hiroshima Univ.)

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2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[19p-C41-6]In-situ Heating TEM Observation of Metal / SiC Contacts

〇SHOHEI HAYASHI¹, Junji Senzaki² (1.Toray Research Center, 2.AIST)

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2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-C41-7]Pt ohmic contacts on p-type SiC with low contact resistivity formed by 600°C-annealing process

〇Kotaro Kuwahara¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

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2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-C41-8]Influences of oxidation and hydrogen etching on surface morphology of SiC(0001)

〇Shinji Kamihata¹, Takuma Kobayashi¹, Heiji Watanabe¹ (1.Osaka Univ.)

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3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-C41-9]Investigation of color centers at SiO₂/SiC interfaces formed by various oxidation temperatures

〇(B)Yu Kaneko¹, Takato Nakanuma¹, Haruko Toyama², Kosuke Tahara², Katsuhiro Kutsuki², Heiji Watanabe¹, Takuma Kobayashi¹ (1.Osaka Univ., 2.Toyota Central R&D Labs., Inc.)

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3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-C41-10]Impacts of Oxidation Temperature and Oxygen Partial Pressure on Luminescence Intensity of Color Centers at SiO₂/SiC Interfaces

〇Kentaro Onishi¹, Takato Nakanuma¹, Haruko Toyama², Kosuke Tahara², Katsuhiro Kutsuki², Heiji Watanabe¹, Takuma Kobayashi¹ (1.Osaka Univ., 2.Toyota Central R&D Labs., Inc.)

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3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-C41-11]Impacts of annealing ambient and time on the color center density at SiO₂/SiC interfaces

〇Takato Nakanuma¹, Kosuke Tahara², Haruko Toyama², Katsuhiro Kutsuki², Heiji Watanabe¹, Takuma Kobayashi¹ (1.Osaka University, 2.Toyota Central R&D Labs., Inc.)

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4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-C41-12]Comprehensive survey of impurity-vacancy pairs in 4H-SiC via ab initio calculations

〇(M2)Sosuke Iwamoto¹, Heiji Watanabe¹, Takuma Kobayashi¹ (1.Osaka Univ.)

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4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-C41-13]Impact of Electron Irradiation on Channel Properties of SiC and Si MOSFETs

〇(M2)Kotaro Matsuki¹, Yoshihito Ichikawa², Yuichi Onozawa², Noriyuki Iwamuro¹, Hiroshi Yano¹ (1.Univ. of Tsukuba, 2.Fuji Electric)

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4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[19p-C41-14]Interface Structure Dependence of Electronic States in 4H-SiC MOS Inversion Layers

〇(DC)Sachika Nagamizo¹, Hajime Tanaka¹, Nobuya Mori¹ (1.Osaka Univ.)

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4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-C41-15]A quantitative analysis of the quantum confinement effect and the energy distribution of interface states in SiC MOSFETs

〇Xilun Chi¹, Koji Ito¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

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5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-C41-16]Threshold Voltage and Mobility in Counter-doped SiC P-channel MOSFETs

〇Ryoma Ito¹, Akira Inoue¹, Kyota Mikami¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

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5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[19p-C41-17]Doping-dependent fixed charges in SiC MOS

〇Kyota Mikami¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

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5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)

[19p-C41-18]First-principles analysis on electronic-structure of SiC/SiO₂ interface after NO annealing.

〇(M1)Kosei Sugiyama¹, Nahoto Funaki¹, Mitsuharu Uemoto¹, Tomoya Ono¹ (1.Kobe Univ.)

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6:00 PM - 6:15 PM JST(9:00 AM - 9:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-C41-19]Interface properties and reliability of NO-nitrided SiC(0-33-8) MOS structures

〇Hayato Iwamoto¹, Takuma Kobayashi¹, Hirohisa Hirai², Mitsuru Sometani^1,2, Mitsuo Okamoto², Heiji Watanabe¹ (1.Osaka Univ., 2.AIST)

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6:15 PM - 6:30 PM JST(9:15 AM - 9:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-C41-20]Effect of Post Annealing on SiO₂/SiC Structures Formed by Plasma Nitridation of SiC Surface Followed by SiO₂ Deposition

〇Hiroki Fujimoto¹, Takuma Kobayashi¹, Heiji Watanabe¹ (1.Osaka Univ.)

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6:30 PM - 6:45 PM JST(9:30 AM - 9:45 AM UTC)

[19p-C41-21]Influence of Al₂O₃ cap layer on nitrogen incorporation kinetics at 4H-SiC/SiO₂ interface

〇Tatsumi Nakashima¹, Takashi Onaya¹, Koji Kita¹ (1.GSFS, The Univ. of Tokyo)

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6:45 PM - 7:00 PM JST(9:45 AM - 10:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-C41-22]Luminescence and threshold voltage shift in SiC MOSFETs under gate AC stress

〇(M1)Ryosuke Shingo¹, Yuya Enjoji¹, Noriyuki Iwamuro¹, Hiroshi Yano¹ (1.Univ. of Tsukuba)

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7:00 PM - 7:15 PM JST(10:00 AM - 10:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-C41-23]Degradation of channel mobility in SiC MOSFETs with negative gate bias stress

〇Keiji Hachiken¹, Takuma Kobayashi¹, Hirohisa Hirai², Mitsuru Sometani^1,2, Mitsuo Okamoto², Heiji Watanabe¹ (1.Osaka Univ., 2.AIST)

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7:15 PM - 7:30 PM JST(10:15 AM - 10:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-C41-24]Improved gate bias stress stability of SiC MOSFETs formed by high temperature oxidation

〇(M1)Qiang Chen¹, Takuma Kobayashi¹, Hirohisa Hirai², Mitsuru Sometani^1,2, Mitsuo Okamoto², Heiji Watanabe¹ (1.Osaka Univ., 2.AIST)

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Session Details

[19p-C41-1~24]13.7 Compound and power devices, process technology and characterization

[19p-C41-1]Modified El-Hoshy−Gibbons model reproducing the Z1 oscillation of electronic stopping cross sections in Si and W for low-velocity ions and its application to 4H-SiC

[19p-C41-2]Suppression of stacking-fault expansion in SiC by helium implantation

[19p-C41-3]Depth distribution of point defects in H or He ion implanted SiC diodes

[19p-C41-4]Observation of Baking Temperature Influence on Interfacial Thermal Resistance at Polymer/SiC Interface Using Optical-Interference Contactless Thermometry (OICT)

[19p-C41-5]Evaluation of Long-term Stability for Silicon-cap-annealed Contact at High-temperture

[19p-C41-6]In-situ Heating TEM Observation of Metal / SiC Contacts

[19p-C41-7]Pt ohmic contacts on p-type SiC with low contact resistivity formed by 600°C-annealing process

[19p-C41-8]Influences of oxidation and hydrogen etching on surface morphology of SiC(0001)

[19p-C41-9]Investigation of color centers at SiO2/SiC interfaces formed by various oxidation temperatures

[19p-C41-10]Impacts of Oxidation Temperature and Oxygen Partial Pressure on Luminescence Intensity of Color Centers at SiO2/SiC Interfaces

[19p-C41-11]Impacts of annealing ambient and time on the color center density at SiO2/SiC interfaces

[19p-C41-12]Comprehensive survey of impurity-vacancy pairs in 4H-SiC via ab initio calculations

[19p-C41-13]Impact of Electron Irradiation on Channel Properties of SiC and Si MOSFETs

[19p-C41-14]Interface Structure Dependence of Electronic States in 4H-SiC MOS Inversion Layers

[19p-C41-15]A quantitative analysis of the quantum confinement effect and the energy distribution of interface states in SiC MOSFETs

[19p-C41-16]Threshold Voltage and Mobility in Counter-doped SiC P-channel MOSFETs

[19p-C41-17]Doping-dependent fixed charges in SiC MOS

[19p-C41-18]First-principles analysis on electronic-structure of SiC/SiO2 interface after NO annealing.

[19p-C41-19]Interface properties and reliability of NO-nitrided SiC(0-33-8) MOS structures

[19p-C41-20]Effect of Post Annealing on SiO2/SiC Structures Formed by Plasma Nitridation of SiC Surface Followed by SiO2 Deposition

[19p-C41-21]Influence of Al2O3 cap layer on nitrogen incorporation kinetics at 4H-SiC/SiO2 interface

[19p-C41-22]Luminescence and threshold voltage shift in SiC MOSFETs under gate AC stress

[19p-C41-23]Degradation of channel mobility in SiC MOSFETs with negative gate bias stress

[19p-C41-24]Improved gate bias stress stability of SiC MOSFETs formed by high temperature oxidation

[19p-C41-1]Modified El-Hoshy−Gibbons model reproducing the Z₁ oscillation of electronic stopping cross sections in Si and W for low-velocity ions and its application to 4H-SiC

[19p-C41-9]Investigation of color centers at SiO₂/SiC interfaces formed by various oxidation temperatures

[19p-C41-10]Impacts of Oxidation Temperature and Oxygen Partial Pressure on Luminescence Intensity of Color Centers at SiO₂/SiC Interfaces

[19p-C41-11]Impacts of annealing ambient and time on the color center density at SiO₂/SiC interfaces

[19p-C41-18]First-principles analysis on electronic-structure of SiC/SiO₂ interface after NO annealing.

[19p-C41-20]Effect of Post Annealing on SiO₂/SiC Structures Formed by Plasma Nitridation of SiC Surface Followed by SiO₂ Deposition

[19p-C41-21]Influence of Al₂O₃ cap layer on nitrogen incorporation kinetics at 4H-SiC/SiO₂ interface