[19p-D62-1~17] 22.1 Joint Session M "Phonon Engineering"

5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)

[19p-D62-15] Investigation of the Phonon Decay Length in a SiO₂ Layer Having a SiO₂/Si Interface Using Superconducting Devices

〇(M2)Tatsuya Iizuka¹, Jutarat Tanarom¹, Yoshinao Mizugaki¹, Hiroshi Shimada¹ (1.UEC)

Keywords:

phonon,ultra-low temperature,superconducting devices

In this study, we fabricated a superconducting quantum interference device (SQUID) as a phonon emitter and a single Cooper pair transistor as a phonon detector (both made of Al) on a SiO₂/Si substrate, and conducted phonon generation and detection experiments at a few tens of millikelvin and a phonon frequency of 90 GHz. Several devices with varied distances between the generator and the detector were prepared for the purpose of investigating the distance dependence of the phonon arrival efficiency. From the measurement results, we determined the phonon decay length from which we can extract information of the transmission probability of phonons at the SiO₂/Si interface.