[19p-D63-1~7] 9.3 Nanoelectronics

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[19p-D63-2] Investigation of dependence on SiO₂ film covering for nanogap formation by electromigration method

〇(M2)Yuhki Tsutsui^1,2, Hisashi Shima², Hiroyuki Akinaga², Hiroshi Suga¹, Yasuhisa Naitoh² (1.Chiba Tech., 2.AIST)

Keywords:

nanogap,electromigration

It was reported that stable non-volatile memory operations were achieved using Pt nanogap electrodes at high temperatures of even 873 K, and the shapes of the nanogaps affected its performance as heat-resistance. Recently, we reported that structural changes during switching operation could be suppressed by coating the nanogap with an alumina film. In this study, we report the dependence of nanogap formation on coating with SiO₂ film, which is widely used in silicon devices.